Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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RFQ
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RFQ
2,845
In-stock
Micro Commercial Co DIODE GPP HE 3A DO-201AD - Obsolete - Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 40V - 200V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
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RFQ
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RFQ
634
In-stock
Micro Commercial Co DIODE GPP HE 3A DO-201AD - Obsolete - Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 40V - 200V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
HERAF803G C0G
RFQ
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RFQ
3,784
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 8A ITO220AC - Active Tube Through Hole TO-220-2 Full Pack ITO-220AC Standard 8A 1V @ 8A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
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RFQ
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RFQ
1,083
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A R-6 - Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
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RFQ
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RFQ
731
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A R-6 - Active Tape & Box (TB) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
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RFQ
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RFQ
3,105
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A R-6 - Active Tape & Reel (TR) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
HERAF1003G C0G
RFQ
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RFQ
3,728
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 10A ITO220AC - Active Tube Through Hole TO-220-2 Full Pack ITO-220AC Standard 10A 1V @ 10A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz