- Series :
- Package / Case :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Applied Filters :
16 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
3,135
In-stock
|
Vishay Semiconductor Diodes Division | DIODE AVALANCHE 200V 4A SOD64 | - | Active | Tape & Box (TB) | Through Hole | SOD-64, Axial | SOD-64 | Avalanche | 4A | 1.1V @ 5A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 175°C | - | |||
|
VIEW |
3,780
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | |||
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|
VIEW |
624
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | |||
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|
VIEW |
1,853
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO201AD | - | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | |||
|
|
VIEW |
3,398
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO201AD | - | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | |||
|
|
VIEW |
2,838
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | |||
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|
VIEW |
3,655
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO201AD | - | Active | Cut Tape (CT) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | |||
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|
VIEW |
2,489
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | |||
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|
VIEW |
3,222
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO201AD | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | |||
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|
VIEW |
3,624
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO201AD | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | |||
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|
VIEW |
2,072
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | |||
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|
VIEW |
2,731
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | |||
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|
VIEW |
3,139
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | |||
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|
VIEW |
1,435
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | |||
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|
VIEW |
2,705
In-stock
|
Vishay Semiconductor Diodes Division | DIODE AVALANCHE 200V 4A SOD64 | - | Active | Cut Tape (CT) | Through Hole | SOD-64, Axial | SOD-64 | Avalanche | 4A | 1.1V @ 5A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 175°C | - | |||
|
|
VIEW |
1,748
In-stock
|
Vishay Semiconductor Diodes Division | DIODE AVALANCHE 200V 4A SOD64 | - | Active | Tape & Reel (TR) | Through Hole | SOD-64, Axial | SOD-64 | Avalanche | 4A | 1.1V @ 5A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 175°C | - | |||
