Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
GLOBAL STOCKS
1N5402G-T
RFQ
VIEW
RFQ
2,294
In-stock
Diodes Incorporated DIODE GEN PURP 200V 3A DO201AD - Discontinued at Digi-Key Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.1V @ 3A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 2µs -65°C ~ 150°C 40pF @ 4V, 1MHz
1N5402G-T
RFQ
VIEW
RFQ
1,252
In-stock
Diodes Incorporated DIODE GEN PURP 200V 3A DO201AD - Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.1V @ 3A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 2µs -65°C ~ 150°C 40pF @ 4V, 1MHz
P300D-E3/54
RFQ
VIEW
RFQ
708
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 3A DO201AD - Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.2V @ 3A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 2µs -50°C ~ 150°C -
GI502-E3/54
RFQ
VIEW
RFQ
3,698
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 3A DO201AD - Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.1V @ 9.4A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 2µs -50°C ~ 150°C 28pF @ 4V, 1MHz
JAN1N5550
RFQ
VIEW
RFQ
1,033
In-stock
Microsemi Corporation DIODE GEN PURP 200V 3A AXIAL Military, MIL-PRF-19500/420 Active Bulk Through Hole B, Axial - Standard 3A 1.2V @ 9A 1µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 2µs -65°C ~ 175°C -
1N5550
RFQ
VIEW
RFQ
3,224
In-stock
Microsemi Corporation DIODE GEN PURP 200V 3A AXIAL - Active Bulk Through Hole B, Axial - Standard 3A 1.2V @ 9A 1µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 2µs -65°C ~ 175°C -