- Series :
- Part Status :
- Packaging :
- Package / Case :
- Applied Filters :
9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
612
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 600MA MPG06 | - | Obsolete | Cut Tape (CT) | Through Hole | MPG06, Axial | MPG06 | Standard | 600mA | 950mV @ 600mA | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 150°C | 9pF @ 4V, 1MHz | |||
|
|
VIEW |
3,973
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 600MA MPG06 | - | Obsolete | Tape & Reel (TR) | Through Hole | MPG06, Axial | MPG06 | Standard | 600mA | 950mV @ 600mA | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 150°C | 9pF @ 4V, 1MHz | |||
|
VIEW |
3,492
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 600MA TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 600mA | 950mV @ 600mA | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | 9pF @ 4V, 1MHz | |||
|
|
VIEW |
3,059
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 600MA TS-1 | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Standard | 600mA | 950mV @ 600mA | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | 9pF @ 4V, 1MHz | |||
|
|
VIEW |
1,338
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 600MA TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 600mA | 950mV @ 600mA | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | 9pF @ 4V, 1MHz | |||
|
|
VIEW |
1,890
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 600MA TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 600mA | 950mV @ 600mA | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | 9pF @ 4V, 1MHz | |||
|
|
VIEW |
3,583
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 600MA TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 600mA | 950mV @ 600mA | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | 9pF @ 4V, 1MHz | |||
|
|
VIEW |
1,889
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 600MA TS-1 | - | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Standard | 600mA | 950mV @ 600mA | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | 9pF @ 4V, 1MHz | |||
|
|
VIEW |
1,371
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 600MA MPG06 | - | Active | Tape & Reel (TR) | Through Hole | MPG06, Axial | MPG06 | Standard | 600mA | 950mV @ 600mA | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 150°C | 9pF @ 4V, 1MHz | |||
