- Series :
- Packaging :
- Voltage - Forward (Vf) (Max) @ If :
- Capacitance @ Vr, F :
- Applied Filters :
24 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
1,476
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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|
VIEW |
1,237
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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|
VIEW |
1,844
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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|
VIEW |
3,492
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 600MA TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 600mA | 950mV @ 600mA | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | 9pF @ 4V, 1MHz | |||
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|
VIEW |
3,059
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 600MA TS-1 | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Standard | 600mA | 950mV @ 600mA | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | 9pF @ 4V, 1MHz | |||
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|
VIEW |
1,338
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 600MA TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 600mA | 950mV @ 600mA | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | 9pF @ 4V, 1MHz | |||
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|
VIEW |
3,817
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | - | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
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|
VIEW |
1,890
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 600MA TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 600mA | 950mV @ 600mA | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | 9pF @ 4V, 1MHz | |||
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|
VIEW |
3,583
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 600MA TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 600mA | 950mV @ 600mA | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | 9pF @ 4V, 1MHz | |||
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|
VIEW |
1,889
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 600MA TS-1 | - | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Standard | 600mA | 950mV @ 600mA | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | 9pF @ 4V, 1MHz | |||
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|
VIEW |
3,793
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1V @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
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|
VIEW |
1,454
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
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|
VIEW |
3,631
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
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|
VIEW |
1,267
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1V @ 1A | 5µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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|
VIEW |
2,517
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1V @ 1A | 5µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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|
VIEW |
2,718
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | - | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1V @ 1A | 5µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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|
VIEW |
645
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1V @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
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|
VIEW |
1,219
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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|
VIEW |
2,067
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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|
VIEW |
3,810
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | - | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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|
VIEW |
1,719
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | - | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1V @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
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|
VIEW |
2,075
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
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|
VIEW |
3,917
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
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|
VIEW |
2,712
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
