- Part Status :
- Package / Case :
- Supplier Device Package :
- Voltage - Forward (Vf) (Max) @ If :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
- Applied Filters :
23 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
1,498
In-stock
|
Vishay Semiconductor Diodes Division | RECTIFIER | Automotive, AEC-Q101 | Last Time Buy | - | Through Hole | P600, Axial | P600 | Standard | 6A | - | 5µA @ 100V | 100V | Standard Recovery >500ns, > 200mA (Io) | 5.5µs | -55°C ~ 175°C | 110pF @ 4V, 1MHz | |||
|
|
VIEW |
3,195
In-stock
|
Semtech Corporation | DIODE GEN PURP 100V 6A AXIAL | - | Active | Bulk | Through Hole | Axial | Axial | Standard | 6A | 875mV @ 4A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 30ns | - | 60pF @ 5V, 1MHz | |||
|
|
VIEW |
2,553
In-stock
|
Microsemi Corporation | DIODE GEN PURP 100V 6A AXIAL | Military, MIL-PRF-19500/477 | Active | Bulk | Through Hole | B, Axial | - | Standard | 6A | 875mV @ 4A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 30ns | -65°C ~ 175°C | 60pF @ 10V, 1MHz | |||
|
VIEW |
607
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 6A DO201AD | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
|
|
VIEW |
1,047
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 6A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
|
|
VIEW |
1,035
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 6A DO201AD | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
|
VIEW |
3,051
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 6A P600 | - | Last Time Buy | Tape & Box (TB) | Through Hole | P600, Axial | P600 | Standard | 6A | 1.1V @ 6A | 5µA @ 100V | 100V | Standard Recovery >500ns, > 200mA (Io) | 5.5µs | -55°C ~ 175°C | - | |||
|
|
VIEW |
645
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 6A P600 | - | Last Time Buy | Tape & Reel (TR) | Through Hole | P600, Axial | P600 | Standard | 6A | 1.1V @ 6A | 5µA @ 100V | 100V | Standard Recovery >500ns, > 200mA (Io) | 5.5µs | -55°C ~ 175°C | - | |||
|
|
VIEW |
3,157
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 6A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
|
|
VIEW |
2,513
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 6A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
|
|
VIEW |
613
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 6A DO201AD | - | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
|
|
VIEW |
3,590
In-stock
|
Semtech Corporation | DIODE GEN PURP 100V 6A AXIAL | - | Active | Bulk | Through Hole | Axial | Axial | Standard | 6A | 1.2V @ 3A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 30ns | -65°C ~ 150°C | 60pF @ 5V, 1MHz | |||
|
|
VIEW |
1,875
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 6A P600 | - | Last Time Buy | Tape & Reel (TR) | Through Hole | P600, Axial | P600 | Standard | 6A | 1.1V @ 6A | 5µA @ 100V | 100V | Standard Recovery >500ns, > 200mA (Io) | 5.5µs | -55°C ~ 175°C | - | |||
|
|
VIEW |
3,995
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 6A P600 | - | Last Time Buy | Tape & Box (TB) | Through Hole | P600, Axial | P600 | Standard | 6A | 1.1V @ 6A | 5µA @ 100V | 100V | Standard Recovery >500ns, > 200mA (Io) | 5.5µs | -55°C ~ 175°C | - | |||
|
|
VIEW |
3,221
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 6A P600 | - | Active | Tape & Box (TB) | Through Hole | P600, Axial | P600 | Standard | 6A | 900mV @ 6A | 5µA @ 100V | 100V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -50°C ~ 150°C | 150pF @ 4V, 1MHz | |||
|
|
VIEW |
3,959
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 6A P600 | - | Active | Tape & Box (TB) | Through Hole | P600, Axial | P600 | Standard | 6A | 900mV @ 6A | 5µA @ 100V | 100V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -50°C ~ 150°C | 150pF @ 4V, 1MHz | |||
|
|
VIEW |
3,914
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 6A P600 | - | Active | Cut Tape (CT) | Through Hole | P600, Axial | P600 | Standard | 6A | 900mV @ 6A | 5µA @ 100V | 100V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -50°C ~ 150°C | 150pF @ 4V, 1MHz | |||
|
|
VIEW |
2,203
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 6A P600 | - | Active | Tape & Reel (TR) | Through Hole | P600, Axial | P600 | Standard | 6A | 900mV @ 6A | 5µA @ 100V | 100V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -50°C ~ 150°C | 150pF @ 4V, 1MHz | |||
|
VIEW |
3,564
In-stock
|
Microsemi Corporation | DIODE GEN PURP 100V 6A AXIAL | - | Active | Bulk | Through Hole | Axial | Axial | Standard | 6A | 925mV @ 6A | 5µA @ 100V | 100V | Standard Recovery >500ns, > 200mA (Io) | 30ns | -55°C ~ 175°C | - | |||
|
|
VIEW |
3,860
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 6A P600 | - | Active | Cut Tape (CT) | Through Hole | P600, Axial | P600 | Standard | 6A | 900mV @ 6A | 5µA @ 100V | 100V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -50°C ~ 150°C | 150pF @ 4V, 1MHz | |||
|
|
VIEW |
2,347
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 6A P600 | - | Active | Tape & Reel (TR) | Through Hole | P600, Axial | P600 | Standard | 6A | 900mV @ 6A | 5µA @ 100V | 100V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -50°C ~ 150°C | 150pF @ 4V, 1MHz | |||
|
VIEW |
3,972
In-stock
|
Micro Commercial Co | DIODE GEN PURP 100V 6A DO201AD | - | Active | Cut Tape (CT) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 1V @ 6A | 5µA @ 100V | 100V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 150pF @ 4V, 1MHz | |||
|
|
VIEW |
1,345
In-stock
|
Micro Commercial Co | DIODE GEN PURP 100V 6A DO201AD | - | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 1V @ 6A | 5µA @ 100V | 100V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 150pF @ 4V, 1MHz | |||
