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16 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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VIEW |
3,982
In-stock
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Infineon Technologies | DIODE SCHOTTKY 650V 8A TO220-2 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 280µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 250pF @ 1V, 1MHz | |||
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VIEW |
2,844
In-stock
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Infineon Technologies | DIODE SCHOTTKY 600V 8A TO220-2 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 8A (DC) | 2.1V @ 8A | 70µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 240pF @ 1V, 1MHz | |||
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VIEW |
3,653
In-stock
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Infineon Technologies | DIODE SCHOTTKY 600V 8A TO220-2 | thinQ!™ | Obsolete | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 300µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 280pF @ 0V, 1MHz | |||
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VIEW |
883
In-stock
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Infineon Technologies | DIODE SCHOTTKY 600V 8A TO220-2 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 100µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 310pF @ 1V, 1MHz | |||
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VIEW |
2,827
In-stock
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Toshiba Semiconductor and Storage | DIODE SCHOTTKY 650V 8A TO220-2L | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2L | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 90µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 44pF @ 650V, 1MHz | |||
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VIEW |
3,608
In-stock
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Infineon Technologies | DIODE SCHOTTKY 600V 8A TO220-2 | thinQ!™ | Active | - | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 8A (DC) | 2.1V @ 8A | 70µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 240pF @ 1V, 1MHz | |||
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VIEW |
625
In-stock
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 560pF @ 0V, 1MHz | |||
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VIEW |
1,476
In-stock
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 560pF @ 0V, 1MHz | |||
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VIEW |
2,624
In-stock
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Infineon Technologies | DIODE SCHOTTKY 650V 8A TO220-2-1 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 140µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 250pF @ 1V, 1MHz | |||
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VIEW |
794
In-stock
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | - | Active | Tube | Through Hole | TO-257-3 | TO-257 | Silicon Carbide Schottky | 8A (DC) | 1.6V @ 2.5A | 10µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 250°C | 237pF @ 1V, 1MHz | |||
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VIEW |
3,542
In-stock
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Rohm Semiconductor | DIODE SCHOTTKY 650V 8A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 8A (DC) | 1.55V @ 8A | 160µA @ 600V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 291pF @ 1V, 1MHz | |||
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VIEW |
3,297
In-stock
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ON Semiconductor | DIODE SCHOTTKY 1.2KV 8A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 8A (DC) | 1.75V @ 8A | 200µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | - | -55°C ~ 175°C | 538pF @ 1V, 100kHz | |||
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VIEW |
3,681
In-stock
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Rohm Semiconductor | DIODE SC SCHKY 650V 8A TO220ACP | - | Active | Tube | Through Hole | TO-220-2 | - | Silicon Carbide Schottky | 8A (DC) | 1.5V @ 8A | 40µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 400pF @ 1V, 1MHz | |||
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VIEW |
1,682
In-stock
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Infineon Technologies | DIODE SCHOTTKY 1200V 8A TO220-2 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 8A (DC) | 1.95V @ 8A | 40µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 365pF @ 1V, 1MHz | |||
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VIEW |
1,447
In-stock
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Rohm Semiconductor | DIODE SCHOTTKY 650V 8A TO-220-2 | Automotive, AEC-Q101 | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 8A (DC) | 1.55V @ 8A | 160µA @ 600V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 291pF @ 1V, 1MHz | |||
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VIEW |
1,556
In-stock
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Littelfuse Inc. | DIODE SIC SCHOTTKY 650V 8A TO220 | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 230µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 260pF @ 1V, 1MHz |