Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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GB10SLT12-220
RFQ
VIEW
RFQ
3,563
In-stock
GeneSiC Semiconductor DIODE SCHOTTKY 1200V 10A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 10A 1.8V @ 10A 40µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 520pF @ 1V, 1MHz
GB05SLT12-220
RFQ
VIEW
RFQ
660
In-stock
GeneSiC Semiconductor DIODE SCHOTTKY 1.2KV 5A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 5A 1.8V @ 2A 50µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 260pF @ 1V, 1MHz
Default Photo
RFQ
VIEW
RFQ
2,103
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 1.2KV 8A TO220AC Automotive, AEC-Q101, FRED Pt® Active - Through Hole TO-220-2 TO-220AC Standard 8A 2.55V @ 8A 55µA @ 1200V 1200V Fast Recovery = 200mA (Io) 144ns -55°C ~ 175°C -
Default Photo
RFQ
VIEW
RFQ
3,082
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 1.2KV 15A TO220AC FRED Pt® Last Time Buy - Through Hole TO-220-2 TO-220AC Standard 15A 2.78V @ 15A 80µA @ 1200V 1200V Fast Recovery = 200mA (Io) 167ns -55°C ~ 175°C -
Default Photo
RFQ
VIEW
RFQ
1,452
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 1.2KV 8A TO220AC FRED Pt® Last Time Buy - Through Hole TO-220-2 TO-220AC Standard 8A 2.55V @ 8A 55µA @ 1200V 1200V Fast Recovery = 200mA (Io) 144ns -55°C ~ 175°C -
Default Photo
RFQ
VIEW
RFQ
3,638
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 1.2KV 15A TO220AC Automotive, AEC-Q101, FRED Pt® Active - Through Hole TO-220-2 TO-220AC Standard 15A 2.78V @ 15A 80µA @ 1200V 1200V Fast Recovery = 200mA (Io) 167ns -55°C ~ 175°C -
MSC030SDA120K
RFQ
VIEW
RFQ
1,513
In-stock
Microsemi Corporation UNRLS, FG, GEN2, SIC SBD, TO-220 - Active - Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 30A (DC) 1.8V @ 10kHz - 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C -
DSEP12-12B
RFQ
VIEW
RFQ
2,480
In-stock
IXYS DIODE GEN PURP 1.2KV 15A TO220AC HiPerFRED™ Active Tube Through Hole TO-220-2 TO-220AC Standard 15A 3.25V @ 15A 100µA @ 1200V 1200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 175°C -
GB02SLT12-220
RFQ
VIEW
RFQ
874
In-stock
GeneSiC Semiconductor DIODE SCHOTTKY 1.2KV 2A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 2A 1.8V @ 2A 50µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 138pF @ 1V, 1MHz
DSEP12-12A
RFQ
VIEW
RFQ
2,472
In-stock
IXYS DIODE GEN PURP 1.2KV 15A TO220AC HiPerFRED™ Active Tube Through Hole TO-220-2 TO-220AC Standard 15A 2.75V @ 15A 100µA @ 1200V 1200V Fast Recovery = 200mA (Io) 40ns -55°C ~ 175°C -
DSEP8-12A
RFQ
VIEW
RFQ
1,430
In-stock
IXYS DIODE GEN PURP 1.2KV 10A TO220AC HiPerFRED™ Active Tube Through Hole TO-220-2 TO-220AC Standard 10A 2.94V @ 10A 60µA @ 1200V 1200V Fast Recovery = 200mA (Io) 40ns -55°C ~ 175°C -
GB01SLT12-220
RFQ
VIEW
RFQ
2,833
In-stock
GeneSiC Semiconductor DIODE SCHOTTKY 1.2KV 1A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 1A 1.8V @ 1A 2µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 69pF @ 1V, 1MHz
DSEP29-12A
RFQ
VIEW
RFQ
2,558
In-stock
IXYS DIODE GEN PURP 1.2KV 30A TO220AC HiPerFRED™ Active Tube Through Hole TO-220-2 TO-220AC Standard 30A 2.75V @ 30A 250µA @ 1200V 1200V Fast Recovery = 200mA (Io) 40ns -55°C ~ 175°C -