Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
GLOBAL STOCKS
ISL9R18120P2
RFQ
VIEW
RFQ
1,460
In-stock
ON Semiconductor DIODE GEN PURP 1.2KV 18A TO220AC Stealth™ Obsolete Tube Through Hole TO-220-2 TO-220AC Standard 18A 3.3V @ 18A 100µA @ 1200V 1200V Fast Recovery = 200mA (Io) 70ns -55°C ~ 150°C -
STTA812D
RFQ
VIEW
RFQ
787
In-stock
STMicroelectronics DIODE GEN PURP 1.2KV 8A TO220AC TURBOSWITCH™ Obsolete Tube Through Hole TO-220-2 TO-220AC Standard 8A 2.2V @ 8A 100µA @ 1200V 1200V Fast Recovery = 200mA (Io) 100ns 150°C (Max) -
STTA1212D
RFQ
VIEW
RFQ
1,975
In-stock
STMicroelectronics DIODE GEN PURP 1.2KV 12A TO220AC TURBOSWITCH™ Obsolete Tube Through Hole TO-220-2 TO-220AC Standard 12A 2.2V @ 12A 100µA @ 1200V 1200V Fast Recovery = 200mA (Io) 100ns 150°C (Max) -
ISL9R8120P2
RFQ
VIEW
RFQ
2,018
In-stock
ON Semiconductor DIODE GEN PURP 1.2KV 8A TO220-2L Stealth™ Obsolete Tube Through Hole TO-220-2 TO-220AC Standard 8A 3.3V @ 8A 100µA @ 1200V 1200V Fast Recovery = 200mA (Io) 300ns -55°C ~ 150°C 30pF @ 10V, 1MHz
20ETF12
RFQ
VIEW
RFQ
2,595
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 1.2KV 20A TO220AC - Obsolete Tube Through Hole TO-220-2 TO-220AC Standard 20A 1.31V @ 20A 100µA @ 1200V 1200V Fast Recovery = 200mA (Io) 400ns -40°C ~ 150°C -
10ETF12
RFQ
VIEW
RFQ
3,672
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 1.2KV 10A TO220AC - Obsolete Tube Through Hole TO-220-2 TO-220AC Standard 10A 1.33V @ 10A 100µA @ 1200V 1200V Fast Recovery = 200mA (Io) 310ns -40°C ~ 150°C -
20ETS12
RFQ
VIEW
RFQ
3,832
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 1.2KV 20A TO220AC - Obsolete Tube Through Hole TO-220-2 TO-220AC Standard 20A 1.1V @ 20A 100µA @ 1200V 1200V Standard Recovery >500ns, > 200mA (Io) - -40°C ~ 150°C -