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  4. Diodes - Rectifiers - Single
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Current - Average Rectified (Io) :
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Voltage - Forward (Vf) (Max) @ If :
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Current - Reverse Leakage @ Vr :
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Voltage - DC Reverse (Vr) (Max) :
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Reverse Recovery Time (trr) :
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Capacitance @ Vr, F :
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40 results
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
GLOBAL STOCKS
V20150SHM3/4W
V20150SHM3/4W
RFQ
VIEW
RFQ
3,273
In-stock
 Vishay Semiconductor Diodes Division DIODE SCHOTTKY 20A 150V TO-220AB Automotive, AEC-Q101 Obsolete Tube Through Hole TO-220-3 TO-220AB Schottky 20A 1.43V @ 20A 250µA @ 150V 150V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
V20150SGHM3/4W
V20150SGHM3/4W
RFQ
VIEW
RFQ
768
In-stock
 Vishay Semiconductor Diodes Division DIODE SCHOTTKY 20A 150V TO-220AB Automotive, AEC-Q101 Obsolete Tube Through Hole TO-220-3 TO-220AB Schottky 20A 1.6V @ 20A 200µA @ 150V 150V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
SF1608GHC0G
SF1608GHC0G
RFQ
VIEW
RFQ
1,972
In-stock
 Taiwan Semiconductor Corporation DIODE GEN PURP 600V 16A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 16A 1.7V @ 8A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SF1607GHC0G
SF1607GHC0G
RFQ
VIEW
RFQ
913
In-stock
 Taiwan Semiconductor Corporation DIODE GEN PURP 500V 16A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 16A 1.7V @ 8A 10µA @ 500V 500V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SF2008GHC0G
SF2008GHC0G
RFQ
VIEW
RFQ
3,707
In-stock
 Taiwan Semiconductor Corporation DIODE GEN PURP 600V 20A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 20A 1.7V @ 10A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF2007GHC0G
SF2007GHC0G
RFQ
VIEW
RFQ
781
In-stock
 Taiwan Semiconductor Corporation DIODE GEN PURP 500V 20A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 20A 1.7V @ 10A 5µA @ 500V 500V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF2006GHC0G
SF2006GHC0G
RFQ
VIEW
RFQ
2,533
In-stock
 Taiwan Semiconductor Corporation DIODE GEN PURP 400V 20A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 20A 1.3V @ 10A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF2005GHC0G
SF2005GHC0G
RFQ
VIEW
RFQ
999
In-stock
 Taiwan Semiconductor Corporation DIODE GEN PURP 300V 20A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 20A 1.3V @ 10A 5µA @ 300V 300V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF2004GHC0G
SF2004GHC0G
RFQ
VIEW
RFQ
2,739
In-stock
 Taiwan Semiconductor Corporation DIODE GEN PURP 200V 20A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 20A 975mV @ 10A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF2003GHC0G
SF2003GHC0G
RFQ
VIEW
RFQ
1,401
In-stock
 Taiwan Semiconductor Corporation DIODE GEN PURP 150V 20A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 20A 975mV @ 10A 5µA @ 150V 150V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF2002GHC0G
SF2002GHC0G
RFQ
VIEW
RFQ
3,776
In-stock
 Taiwan Semiconductor Corporation DIODE GEN PURP 100V 20A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 20A 975mV @ 10A 5µA @ 100V 100V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF2001GHC0G
SF2001GHC0G
RFQ
VIEW
RFQ
1,167
In-stock
 Taiwan Semiconductor Corporation DIODE GEN PURP 50V 20A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 20A 975mV @ 10A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF1606GHC0G
SF1606GHC0G
RFQ
VIEW
RFQ
2,164
In-stock
 Taiwan Semiconductor Corporation DIODE GEN PURP 400V 16A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 16A 1.3V @ 8A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
VT1080SHM3/4W
VT1080SHM3/4W
RFQ
VIEW
RFQ
3,018
In-stock
 Vishay Semiconductor Diodes Division DIODE SCHOTTKY 10A 80V TO-220AB Automotive, AEC-Q101 Obsolete Tube Through Hole TO-220-3 TO-220AB Schottky 10A 810mV @ 10A 600µA @ 80V 80V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
V20150S-M3/4W
V20150S-M3/4W
RFQ
VIEW
RFQ
2,882
In-stock
 Vishay Semiconductor Diodes Division DIODE SCHOTTKY 20A 150V TO-220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Schottky 20A 1.6V @ 20A 200µA @ 150V 150V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
V20150SG-M3/4W
V20150SG-M3/4W
RFQ
VIEW
RFQ
2,057
In-stock
 Vishay Semiconductor Diodes Division DIODE SCHOTTKY 20A 150V TO-220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Schottky 20A 1.6V @ 20A 200µA @ 150V 150V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
SF1605GHC0G
SF1605GHC0G
RFQ
VIEW
RFQ
1,943
In-stock
 Taiwan Semiconductor Corporation DIODE GEN PURP 300V 16A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 16A 1.3V @ 8A 10µA @ 300V 300V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SF1604GHC0G
SF1604GHC0G
RFQ
VIEW
RFQ
3,854
In-stock
 Taiwan Semiconductor Corporation DIODE GEN PURP 200V 16A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 16A 975mV @ 8A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF1603GHC0G
SF1603GHC0G
RFQ
VIEW
RFQ
2,387
In-stock
 Taiwan Semiconductor Corporation DIODE GEN PURP 150V 16A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 16A 975mV @ 8A 10µA @ 150V 150V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF1008GHC0G
SF1008GHC0G
RFQ
VIEW
RFQ
2,030
In-stock
 Taiwan Semiconductor Corporation DIODE GEN PURP 600V 10A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 10A 1.7V @ 5A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 50pF @ 4V, 1MHz
SF1007GHC0G
SF1007GHC0G
RFQ
VIEW
RFQ
3,439
In-stock
 Taiwan Semiconductor Corporation DIODE GEN PURP 500V 10A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 10A 1.7V @ 5A 10µA @ 500V 500V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 50pF @ 4V, 1MHz
SF1006GHC0G
SF1006GHC0G
RFQ
VIEW
RFQ
769
In-stock
 Taiwan Semiconductor Corporation DIODE GEN PURP 300V 10A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 10A 1.3V @ 5A 10µA @ 300V 300V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 50pF @ 4V, 1MHz
SF1005GHC0G
SF1005GHC0G
RFQ
VIEW
RFQ
886
In-stock
 Taiwan Semiconductor Corporation DIODE GEN PURP 300V 10A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 10A 1.3V @ 5A 10µA @ 300V 300V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 50pF @ 4V, 1MHz
SF806GHC0G
SF806GHC0G
RFQ
VIEW
RFQ
3,229
In-stock
 Taiwan Semiconductor Corporation DIODE GEN PURP 400V 8A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 8A 1.3V @ 8A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 50pF @ 4V, 1MHz
SF805GHC0G
SF805GHC0G
RFQ
VIEW
RFQ
2,616
In-stock
 Taiwan Semiconductor Corporation DIODE GEN PURP 300V 8A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 8A 1.3V @ 8A 10µA @ 300V 300V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 50pF @ 4V, 1MHz
SF804GHC0G
SF804GHC0G
RFQ
VIEW
RFQ
3,203
In-stock
 Taiwan Semiconductor Corporation DIODE GEN PURP 200V 8A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 8A 975mV @ 8A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 70pF @ 4V, 1MHz
SF803GHC0G
SF803GHC0G
RFQ
VIEW
RFQ
1,164
In-stock
 Taiwan Semiconductor Corporation DIODE GEN PURP 150V 8A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 8A 975mV @ 8A 10µA @ 150V 150V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 70pF @ 4V, 1MHz
SF802GHC0G
SF802GHC0G
RFQ
VIEW
RFQ
3,160
In-stock
 Taiwan Semiconductor Corporation DIODE GEN PURP 100V 8A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 8A 975mV @ 8A 10µA @ 100V 100V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 70pF @ 4V, 1MHz
SF801GHC0G
SF801GHC0G
RFQ
VIEW
RFQ
3,992
In-stock
 Taiwan Semiconductor Corporation DIODE GEN PURP 50V 8A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 8A 975mV @ 8A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 70pF @ 4V, 1MHz
SR1050HC0G
SR1050HC0G
RFQ
VIEW
RFQ
1,137
In-stock
 Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 10A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Schottky 10A 700mV @ 5A 500µA @ 50V 50V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
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