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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
,-TO-263AB.jpg)
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VIEW |
3,616
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 16A TO263AB | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Standard | 16A | 975mV @ 8A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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VIEW |
2,414
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 16A ITO220AB | Automotive, AEC-Q101 | Active | Tube | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | Standard | 16A | 975mV @ 8A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
|
VIEW |
3,854
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 16A TO220AB | Automotive, AEC-Q101 | Active | Tube | Through Hole | TO-220-3 | TO-220AB | Standard | 16A | 975mV @ 8A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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|
VIEW |
3,203
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 8A TO220AB | Automotive, AEC-Q101 | Active | Tube | Through Hole | TO-220-3 | TO-220AB | Standard | 8A | 975mV @ 8A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 70pF @ 4V, 1MHz | |||
|
VIEW |
824
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 8A TO220AC | Automotive, AEC-Q101 | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Standard | 8A | 975mV @ 8A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
