Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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RFQ
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RFQ
3,004
In-stock
Vishay Semiconductor Diodes Division DIODE ARRAY GP TO220AC Automotive, AEC-Q101 Obsolete - Through Hole TO-220-2 TO-220AC Standard 8A 1.5V @ 8A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 85pF @ 4V, 1MHz
NS8DTHE3_A/P
RFQ
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RFQ
2,916
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 8A TO220AC Automotive, AEC-Q101 Obsolete Tube Through Hole TO-220-2 TO-220AC Standard 8A 1.1V @ 8A 10µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 55pF @ 4V, 1MHz
MBR10200HC0G
RFQ
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RFQ
1,032
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 10A TO220AC Automotive, AEC-Q101 Active Tube Through Hole TO-220-2 TO-220AC Standard 10A 1.05V @ 10A 100µA @ 200V 200V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
SFA1004GHC0G
RFQ
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RFQ
2,918
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 10A TO220AC Automotive, AEC-Q101 Active Tube Through Hole TO-220-2 TO-220AC Standard 10A 975mV @ 10A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 70pF @ 4V, 1MHz
SFA804GHC0G
RFQ
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RFQ
824
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 8A TO220AC Automotive, AEC-Q101 Active Tube Through Hole TO-220-2 TO-220AC Standard 8A 975mV @ 8A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
GPA803HC0G
RFQ
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RFQ
2,014
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 8A TO220AC Automotive, AEC-Q101 Active Tube Through Hole TO-220-2 TO-220AC Standard 8A 1.1V @ 8A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 50pF @ 4V, 1MHz