Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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UG58GHB0G
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Taiwan Semiconductor Corporation DIODE GEN PURP 600V 5A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 5A 2.1V @ 5A 30µA @ 600V 600V Fast Recovery = 200mA (Io) 20ns -55°C ~ 150°C -
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1,450
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Taiwan Semiconductor Corporation DIODE GEN PURP 600V 5A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 5A 2.1V @ 5A 30µA @ 600V 600V Fast Recovery = 200mA (Io) 20ns -55°C ~ 150°C -
UG58GHR0G
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3,822
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Taiwan Semiconductor Corporation DIODE GEN PURP 600V 5A DO201AD Automotive, AEC-Q101 Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 5A 2.1V @ 5A 30µA @ 600V 600V Fast Recovery = 200mA (Io) 20ns -55°C ~ 150°C -