Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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RFQ
1,617
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Taiwan Semiconductor Corporation DIODE GEN PURP 6A R-6 Automotive, AEC-Q101 Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 1000V 1000V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
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RFQ
1,598
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Taiwan Semiconductor Corporation DIODE GEN PURP 6A R-6 Automotive, AEC-Q101 Active Tape & Reel (TR) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 1000V 1000V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
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RFQ
1,529
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Taiwan Semiconductor Corporation DIODE GEN PURP 6A R-6 Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 1000V 1000V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
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RFQ
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RFQ
2,121
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 6A R-6 Automotive, AEC-Q101 Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 800V 800V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
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RFQ
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RFQ
663
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 6A R-6 Automotive, AEC-Q101 Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 600V 600V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
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RFQ
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RFQ
1,327
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 6A R-6 Automotive, AEC-Q101 Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 400V 400V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
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RFQ
629
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A R-6 Automotive, AEC-Q101 Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
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RFQ
884
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 6A R-6 Automotive, AEC-Q101 Active Tape & Reel (TR) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 800V 800V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
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RFQ
2,183
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Taiwan Semiconductor Corporation DIODE GEN PURP 600V 6A R-6 Automotive, AEC-Q101 Active Tape & Reel (TR) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 600V 600V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
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RFQ
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RFQ
1,666
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 6A R-6 Automotive, AEC-Q101 Active Tape & Reel (TR) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 400V 400V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
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RFQ
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RFQ
1,407
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A R-6 Automotive, AEC-Q101 Active Tape & Reel (TR) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
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RFQ
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RFQ
3,127
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 6A R-6 Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 800V 800V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
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RFQ
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RFQ
2,833
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 6A R-6 Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 600V 600V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
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RFQ
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RFQ
953
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 6A R-6 Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 400V 400V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
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RFQ
603
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A R-6 Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz