- Supplier Device Package :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Applied Filters :
24 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
2,556
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.28V @ 4A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | |||
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|
VIEW |
2,222
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.7V @ 4A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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VIEW |
2,248
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 3A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
VIEW |
3,728
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 1A DO204AL | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.2V @ 1A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 200ns | - | 12pF @ 4V, 1MHz | |||
|
VIEW |
1,425
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 1A DO204AC | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard | 1A | 1.25V @ 1A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 175°C | 27pF @ 4V, 1MHz | |||
|
VIEW |
1,278
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 1A DO204AL | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.7V @ 1A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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|
VIEW |
2,786
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 1A DO204AL | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.7V @ 1A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 17pF @ 4V, 1MHz | |||
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|
VIEW |
3,815
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 1A DO204AL | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.2V @ 1A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 200ns | -55°C ~ 150°C | 12pF @ 4V, 1MHz | |||
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|
VIEW |
1,450
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 5A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 5A | 2.1V @ 5A | 30µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 20ns | -55°C ~ 150°C | - | |||
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|
VIEW |
2,240
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 1.5A DO204AC | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard | 1.5A | 1.3V @ 1.5A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 250ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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|
VIEW |
3,356
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 1A DO204AL | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.25V @ 1A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 175°C | 27pF @ 4V, 1MHz | |||
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|
VIEW |
3,841
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 1A DO204AL | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.2V @ 1A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 200ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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|
VIEW |
3,442
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 1A DO204AL | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.2V @ 1A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
VIEW |
3,338
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.7V @ 1A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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|
VIEW |
2,510
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 2A DO204AC | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard | 2A | 1.7V @ 2A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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|
VIEW |
865
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 1A DO204AL | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.7V @ 1A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 17pF @ 4V, 1MHz | |||
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VIEW |
3,405
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.28V @ 4A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | |||
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|
VIEW |
1,901
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 1.7V @ 6A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
|
VIEW |
2,349
In-stock
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Vishay Semiconductor Diodes Division | DIODE GPP 1A 600V 200NS MPG06 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | MPG06, Axial | MPG06 | Standard | 1A | 1.3V @ 1A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 200ns | -55°C ~ 150°C | 6.6pF @ 4V, 1MHz | |||
|
VIEW |
1,348
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 1A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 1A | 1.2V @ 1A | 500nA @ 600V | 600V | Fast Recovery = 200mA (Io) | 250ns | -65°C ~ 175°C | 25pF @ 4V, 1MHz | |||
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|
VIEW |
1,876
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.7V @ 1A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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|
VIEW |
3,604
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 2A DO204AC | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard | 2A | 1.7V @ 2A | 1µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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|
VIEW |
2,935
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 250ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
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|
VIEW |
1,943
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 250ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
