- Part Status :
- Package / Case :
- Supplier Device Package :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
- Applied Filters :
23 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
2,149
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 1A DO204AL | Automotive, AEC-Q101 | Obsolete | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.3V @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 150ns | -65°C ~ 175°C | 15pF @ 4V, 1MHz | |||
|
VIEW |
1,739
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
|
VIEW |
986
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 300V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
|
VIEW |
2,475
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
|
VIEW |
1,755
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 300V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
|
VIEW |
3,206
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 1A DO204AL | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.3V @ 1A | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
|
VIEW |
1,028
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 300V 1A DO204AL | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.3V @ 1A | 5µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
|
VIEW |
1,948
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
VIEW |
2,325
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
VIEW |
1,891
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
VIEW |
3,113
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 1000V | - | Fast Recovery = 200mA (Io) | 500ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
VIEW |
1,992
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 500ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
VIEW |
646
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 1000V | - | Fast Recovery = 200mA (Io) | 500ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
VIEW |
907
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 500ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
VIEW |
1,923
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
VIEW |
2,349
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GPP 1A 600V 200NS MPG06 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | MPG06, Axial | MPG06 | Standard | 1A | 1.3V @ 1A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 200ns | -55°C ~ 150°C | 6.6pF @ 4V, 1MHz | |||
|
VIEW |
1,933
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GPP 1A 200V 150NS MPG06 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | MPG06, Axial | MPG06 | Standard | 1A | 1.3V @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 6.6pF @ 4V, 1MHz | |||
|
VIEW |
2,935
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 250ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
VIEW |
784
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
VIEW |
1,943
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 250ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
VIEW |
794
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
VIEW |
2,075
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
VIEW |
3,917
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz |