- Supplier Device Package :
- Current - Reverse Leakage @ Vr :
- Capacitance @ Vr, F :
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5 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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GLOBAL STOCKS | ||||||||||||||||||||||
VIEW |
3,135
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 20A ITO220AB | Automotive, AEC-Q101 | Active | Tube | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | Standard | 20A | 975mV @ 10A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 90pF @ 4V, 1MHz | ||||
VIEW |
2,739
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 20A TO220AB | Automotive, AEC-Q101 | Active | Tube | Through Hole | TO-220-3 | TO-220AB | Standard | 20A | 975mV @ 10A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
VIEW |
3,606
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 10A ITO220AC | Automotive, AEC-Q101 | Active | Tube | Through Hole | TO-220-2 Full Pack | ITO-220AC | Standard | 10A | 975mV @ 10A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 170pF @ 4V, 1MHz | ||||
VIEW |
736
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 10A ITO220AB | Automotive, AEC-Q101 | Active | Tube | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | Standard | 10A | 975mV @ 10A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 70pF @ 4V, 1MHz | ||||
VIEW |
2,918
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 10A TO220AC | Automotive, AEC-Q101 | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Standard | 10A | 975mV @ 10A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 70pF @ 4V, 1MHz |