- Packaging :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Capacitance @ Vr, F :
- Applied Filters :
11 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
2,190
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 3A DO214AA | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | Standard | 3A | 1.45V @ 3A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 34pF @ 4V, 1MHz | |||
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VIEW |
2,606
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 3A DO214AA | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | Standard | 3A | 1.7V @ 3A | 10µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 30pF @ 4V, 1MHz | |||
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VIEW |
1,607
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 3A DO214AA | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | Standard | 3A | 1.13V @ 3A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 41pF @ 4V, 1MHz | |||
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VIEW |
1,608
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 300V 3A DO214AA | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | Standard | 3A | 1.13V @ 3A | 10µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 41pF @ 4V, 1MHz | |||
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|
VIEW |
2,383
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 3A DO214AA | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | Standard | 3A | 1V @ 3A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 46pF @ 4V, 1MHz | |||
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VIEW |
1,865
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 3A DO214AA | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | Standard | 3A | 1.7V @ 3A | 10µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 30pF @ 4V, 1MHz | |||
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|
VIEW |
3,799
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 3A DO214AA | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | Standard | 3A | 1.13V @ 3A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 41pF @ 4V, 1MHz | |||
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|
VIEW |
3,436
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 300V 3A DO214AA | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | Standard | 3A | 1.13V @ 3A | 10µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 41pF @ 4V, 1MHz | |||
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|
VIEW |
1,192
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 3A DO214AA | Automotive, AEC-Q101 | Active | Digi-Reel® | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | Standard | 3A | 1.45V @ 3A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 34pF @ 4V, 1MHz | |||
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VIEW |
3,934
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 3A DO214AA | Automotive, AEC-Q101 | Active | Cut Tape (CT) | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | Standard | 3A | 1.45V @ 3A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 34pF @ 4V, 1MHz | |||
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|
VIEW |
3,040
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 3A DO214AA | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | Standard | 3A | 1.45V @ 3A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 34pF @ 4V, 1MHz | |||
