- Manufacture :
- Package / Case :
- Supplier Device Package :
- Current - Average Rectified (Io) :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
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2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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GLOBAL STOCKS | ||||||||||||||||||||||
VIEW |
2,880
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | - | Active | Tube | Through Hole | TO-257-3 | TO-257 | Silicon Carbide Schottky | 9.4A (DC) | 1.6V @ 10A | 20µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 250°C | 884pF @ 1V, 1MHz | ||||
VIEW |
3,666
In-stock
|
Rohm Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 10A (DC) | 1.6V @ 10A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 550pF @ 1V, 1MHz |