- Part Status :
- Supplier Device Package :
- Current - Average Rectified (Io) :
- Voltage - Forward (Vf) (Max) @ If :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
- Applied Filters :
25 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
1,718
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 1A DO204AL | - | Obsolete | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.1V @ 1A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -50°C ~ 150°C | 15pF @ 4V, 1MHz | |||
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VIEW |
2,115
In-stock
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Micro Commercial Co | DIODE GEN PURP 800V 1A DO-41 | - | Obsolete | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard | 1A (DC) | 1V @ 1A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
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VIEW |
2,704
In-stock
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Micro Commercial Co | DIODE GEN PURP 800V 1A DO-41 | - | Obsolete | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard | 1A (DC) | 1V @ 1A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
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|
VIEW |
2,750
In-stock
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Micro Commercial Co | DIODE GEN PURP 800V 1A DO-41 | - | Obsolete | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard | 1A (DC) | 1V @ 1A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
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|
VIEW |
3,132
In-stock
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Micro Commercial Co | DIODE GEN PURP 800V 1A DO-41 | - | Obsolete | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard | 1A (DC) | 1V @ 1A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
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|
VIEW |
3,867
In-stock
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Micro Commercial Co | DIODE GEN PURP 800V 1A DO-41 | - | Obsolete | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard | 1A (DC) | 1V @ 1A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
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|
VIEW |
2,818
In-stock
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Micro Commercial Co | DIODE GEN PURP 800V 1A DO-41 | - | Obsolete | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard | 1A (DC) | 1V @ 1A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
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|
VIEW |
911
In-stock
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Micro Commercial Co | DIODE GEN PURP 800V 1A DO-41 | - | Obsolete | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard | 1A (DC) | 1V @ 1A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
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|
VIEW |
3,296
In-stock
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Micro Commercial Co | DIODE GEN PURP 800V 1A DO-41 | - | Obsolete | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard | 1A (DC) | 1V @ 1A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
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VIEW |
956
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 1A DO204AL | - | Obsolete | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.3V @ 1A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -65°C ~ 175°C | 15pF @ 4V, 1MHz | |||
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|
VIEW |
927
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 1A DO204AL | - | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.7V @ 1A | 5µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 125°C | 10pF @ 4V, 1MHz | |||
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VIEW |
3,647
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 1A DO204AL | - | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.7V @ 1A | 5µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 75ns | -40°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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|
VIEW |
1,876
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 1A DO204AL | - | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.1V @ 1A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -50°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
VIEW |
1,998
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 1A DO204AL | - | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.7V @ 1A | 5µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 17pF @ 4V, 1MHz | |||
|
VIEW |
610
In-stock
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STMicroelectronics | DIODE GEN PURP 800V 1A DO41 | - | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard | 1A | 1.65V @ 1A | 5µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 75ns | 175°C (Max) | - | |||
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VIEW |
2,609
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 1A DO204AL | - | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.3V @ 1A | 5µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 500ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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VIEW |
715
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 1A DO204AL | - | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.1V @ 1A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
VIEW |
2,633
In-stock
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Comchip Technology | DIODE GEN PURP 800V 1A DO41 | - | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard | 1A | 1.1V @ 1A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
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VIEW |
2,780
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 1A DO204AL | - | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | - | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | 300ns | -65°C ~ 175°C | 15pF @ 4V, 1MHz | |||
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|
VIEW |
2,971
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 1A DO204AL | - | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.7V @ 1A | 5µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 17pF @ 4V, 1MHz | |||
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|
VIEW |
1,987
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 1A DO204AL | - | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.7V @ 1A | 5µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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|
VIEW |
3,873
In-stock
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Comchip Technology | DIODE GEN PURP 800V 1A DO41 | - | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard | 1A | 1.7V @ 1A | 5µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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|
VIEW |
1,040
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 1A DO204AL | - | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.1V @ 1A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
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|
VIEW |
1,736
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 1.5A DO204AL | - | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1.5A | 1.4V @ 1.5A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | 2µs | -50°C ~ 150°C | 15pF @ 4V, 1MHz | |||
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|
VIEW |
2,212
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 1A DO204AL | - | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1V @ 1A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
