- Part Status :
- Mounting Type :
- Supplier Device Package :
- Diode Type :
- Current - Average Rectified (Io) :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
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14 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
3,311
In-stock
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Microsemi Corporation | DIODE SCHOTTKY 1700V 10A TO247 | - | Obsolete | - | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 23A (DC) | 1.8V @ 10A | 200µA @ 1700V | 1700V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1120pF @ 0V, 1MHz | |||
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|
VIEW |
1,098
In-stock
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Microsemi Corporation | DIODE SCHOTTKY 1200V 10A TO247 | - | Obsolete | - | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 43A (DC) | 1.8V @ 10A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 630pF @ 1V, 1MHz | |||
|
VIEW |
3,381
In-stock
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Renesas Electronics America | DIODE SCHOTTKY 600V 10A TO220FP | - | Active | Tube | Surface Mount | TO-220-3 Full Pack | TO-220FP | Schottky | 10A (DC) | 1.8V @ 10A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | - | |||
|
VIEW |
2,603
In-stock
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Cree/Wolfspeed | DIODE SCHOTTKY 600V 16.5A TO263 | - | Obsolete | Tube | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-2 | Silicon Carbide Schottky | 16.5A | 1.8V @ 10A | 200µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 550pF @ 0V, 1MHz | |||
|
VIEW |
3,978
In-stock
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Cree/Wolfspeed | DIODE SCHOTTKY 600V 16.5A TO220 | - | Obsolete | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 16.5A | 1.8V @ 10A | 200µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 550pF @ 0V, 1MHz | |||
|
VIEW |
3,563
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 10A | 1.8V @ 10A | 40µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 520pF @ 1V, 1MHz | |||
|
VIEW |
1,377
In-stock
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WeEn Semiconductors | DIODE GEN PURP 600V 10A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Standard | 10A | 1.8V @ 10A | - | 600V | Fast Recovery = 200mA (Io) | 19ns | 150°C (Max) | - | |||
|
VIEW |
607
In-stock
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ON Semiconductor | DIODE GEN PURP 1.5KV 10A TO220F | - | Obsolete | Tube | Through Hole | TO-220-2 Full Pack | TO-220F-2L | Standard | 10A | 1.8V @ 10A | 15µA @ 1500V | 1500V | Fast Recovery = 200mA (Io) | 150ns | -65°C ~ 150°C | - | |||
|
VIEW |
978
In-stock
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Central Semiconductor Corp | DIODE SCHOTTKY 1.2KV 10A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 10A | 1.8V @ 10A | 400µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 41pF @ 600V, 1MHz | |||
|
VIEW |
2,246
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 10A TO277A | - | Active | Digi-Reel® | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | Standard | 10A | 1.8V @ 10A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 40ns | -55°C ~ 175°C | 140pF @ 4V, 1MHz | |||
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|
VIEW |
2,387
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 10A TO277A | - | Active | Cut Tape (CT) | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | Standard | 10A | 1.8V @ 10A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 40ns | -55°C ~ 175°C | 140pF @ 4V, 1MHz | |||
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|
VIEW |
3,998
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 10A TO277A | - | Active | Tape & Reel (TR) | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | Standard | 10A | 1.8V @ 10A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 40ns | -55°C ~ 175°C | 140pF @ 4V, 1MHz | |||
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|
VIEW |
1,310
In-stock
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Microsemi Corporation | DIODE SCHOTTKY 1.2KV 36A TO247 | - | Obsolete | Tube | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 36A (DC) | 1.8V @ 10A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 600pF @ 0V, 1MHz | |||
|
VIEW |
3,342
In-stock
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Microsemi Corporation | DIODE SILICON 650V 17A TO220 | - | Obsolete | Bulk | Through Hole | TO-220-2 | TO-220 [K] | Silicon Carbide Schottky | 17A | 1.8V @ 10A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 300pF @ 1V, 1MHz | |||
