- Manufacture :
- Mounting Type :
- Diode Type :
- Current - Reverse Leakage @ Vr :
-
- 100µA @ 1200V (2)
- 100µA @ 1300V (2)
- 100µA @ 650V (2)
- 10µA @ 600V (1)
- 125µA @ 650V (1)
- 1mA @ 30V (4)
- 1mA @ 40V (5)
- 1mA @ 60V (8)
- 1µA @ 360V (1)
- 1µA @ 600V (1)
- 200µA @ 1200V (3)
- 200µA @ 300V (1)
- 200µA @ 600V (6)
- 200µA @ 650V (1)
- 250µA @ 1200V (1)
- 250µA @ 1300V (1)
- 250µA @ 650V (1)
- 27µA @ 1200V (1)
- 27µA @ 600V (2)
- 500µA @ 45V (2)
- 50µA @ 650V (1)
- 90µA @ 650V (1)
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
-
- 290pF @ 1V, 1MHz (1)
- 325pF @ 1V, 1MHz (1)
- 345pF @ 10V, 1MHz (8)
- 365pF @ 1V, 1MHz (5)
- 420pF @ 10V, 1MHz (5)
- 430pF @ 1V, 1MHz (1)
- 500pF @ 1V, 1MHz (2)
- 530pF @ 10V, 1MHz (4)
- 550pF @ 1V, 1MHz (1)
- 575pF @ 1V, 100kHz (1)
- 600pF @ 1V, 1MHz (1)
- 612pF @ 1V, 100kHz (1)
- 650pF @ 1V, 1MHz (1)
- 710pF @ 0V, 1MHz (2)
- 780pF @ 0V, 1MHz (2)
- Applied Filters :
52 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
1,015
In-stock
|
Renesas Electronics America | DIODE GEN PURP 360V 10A LDPAK | - | Active | Tape & Reel (TR) | Surface Mount | SC-83 | 4-LDPAK | Standard | 10A (DC) | 1.7V @ 10A | 1µA @ 360V | 360V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 150°C | - | |||
|
VIEW |
3,381
In-stock
|
Renesas Electronics America | DIODE SCHOTTKY 600V 10A TO220FP | - | Active | Tube | Surface Mount | TO-220-3 Full Pack | TO-220FP | Schottky | 10A (DC) | 1.8V @ 10A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | - | |||
|
VIEW |
1,715
In-stock
|
Infineon Technologies | DIODE SILICON 300V 10A WAFER | - | Discontinued at Digi-Key | Bulk | Surface Mount | Die | Sawn on foil | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 200µA @ 300V | 300V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 600pF @ 1V, 1MHz | |||
|
VIEW |
1,945
In-stock
|
Infineon Technologies | DIODE GEN PURP 1.2KV 10A WAFER | - | Discontinued at Digi-Key | Bulk | Surface Mount | Die | Sawn on foil | Standard | 10A (DC) | 1.6V @ 10A | 27µA @ 1200V | 1200V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | - | |||
|
VIEW |
3,244
In-stock
|
Infineon Technologies | DIODE GEN PURP 600V 10A WAFER | - | Discontinued at Digi-Key | Bulk | Surface Mount | Die | Sawn on foil | Standard | 10A (DC) | 1.25V @ 10A | 27µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | - | |||
|
VIEW |
1,271
In-stock
|
Infineon Technologies | DIODE GEN PURP 600V 10A WAFER | - | Discontinued at Digi-Key | Bulk | Surface Mount | Die | Sawn on foil | Standard | 10A (DC) | 1.95V @ 10A | 27µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -40°C ~ 175°C | - | |||
|
VIEW |
2,409
In-stock
|
Rohm Semiconductor | DIODE SCHOTTKY 650V 10A TO220FM | - | Active | Tube | Through Hole | TO-220-2 | TO-220FM | Silicon Carbide Schottky | 10A (DC) | 1.55V @ 10A | 200µA @ 600V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 365pF @ 1V, 1MHz | |||
|
VIEW |
762
In-stock
|
Rohm Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO220AC | - | Not For New Designs | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 10A (DC) | 1.75V @ 10A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 650pF @ 1V, 1MHz | |||
|
VIEW |
1,493
In-stock
|
NXP USA Inc. | DIODE GEN PURP 1.5KV 10A TO220F | - | Obsolete | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | Standard | 10A (DC) | 1.35V @ 6.5A | 250µA @ 1300V | 1500V | Fast Recovery = 200mA (Io) | 220ns | 150°C (Max) | - | |||
|
VIEW |
3,297
In-stock
|
NXP USA Inc. | DIODE GEN PURP 1.5KV 10A TO220F | - | Obsolete | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | Standard | 10A (DC) | 1.8V @ 20A | 100µA @ 1300V | 1500V | Standard Recovery >500ns, > 200mA (Io) | 600ns | 150°C (Max) | - | |||
|
VIEW |
1,684
In-stock
|
Rohm Semiconductor | DIODE SCHOTTKY 600V 10A TO220FM | - | Not For New Designs | Tube | Through Hole | TO-220-2 | TO-220FM | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 200µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | 150°C (Max) | 430pF @ 1V, 1MHz | |||
|
VIEW |
3,788
In-stock
|
Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 780pF @ 0V, 1MHz | |||
|
VIEW |
1,492
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 60V 10A L-FLAT | - | Obsolete | Bulk | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.58V @ 10A | 1mA @ 60V | 60V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 345pF @ 10V, 1MHz | |||
|
VIEW |
3,295
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 60V 10A L-FLAT | - | Obsolete | Tape & Reel (TR) | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.58V @ 10A | 1mA @ 60V | 60V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 345pF @ 10V, 1MHz | |||
|
VIEW |
1,657
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 60V 10A L-FLAT | - | Obsolete | Tape & Reel (TR) | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.58V @ 10A | 1mA @ 60V | 60V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 345pF @ 10V, 1MHz | |||
|
VIEW |
1,021
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 60V 10A L-FLAT | - | Obsolete | Tape & Reel (TR) | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.58V @ 10A | 1mA @ 60V | 60V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 345pF @ 10V, 1MHz | |||
|
VIEW |
3,260
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 60V 10A L-FLAT | - | Obsolete | Tape & Reel (TR) | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.58V @ 10A | 1mA @ 60V | 60V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 345pF @ 10V, 1MHz | |||
|
VIEW |
3,147
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 60V 10A L-FLAT | - | Obsolete | Tape & Reel (TR) | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.58V @ 10A | 1mA @ 60V | 60V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 345pF @ 10V, 1MHz | |||
|
VIEW |
3,415
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 60V 10A L-FLAT | - | Obsolete | Bulk | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.58V @ 10A | 1mA @ 60V | 60V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 345pF @ 10V, 1MHz | |||
|
VIEW |
2,104
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 60V 10A L-FLAT | - | Obsolete | Bulk | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.58V @ 10A | 1mA @ 60V | 60V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 345pF @ 10V, 1MHz | |||
|
VIEW |
1,575
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 40V 10A L-FLAT | - | Obsolete | Tape & Reel (TR) | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.55V @ 10A | 1mA @ 40V | 40V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 420pF @ 10V, 1MHz | |||
|
VIEW |
602
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 40V 10A L-FLAT | - | Obsolete | Tape & Reel (TR) | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.55V @ 10A | 1mA @ 40V | 40V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 420pF @ 10V, 1MHz | |||
|
VIEW |
875
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 40V 10A L-FLAT | - | Obsolete | Tape & Reel (TR) | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.55V @ 10A | 1mA @ 40V | 40V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 420pF @ 10V, 1MHz | |||
|
VIEW |
2,692
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 40V 10A L-FLAT | - | Obsolete | Bulk | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.55V @ 10A | 1mA @ 40V | 40V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 420pF @ 10V, 1MHz | |||
|
VIEW |
1,505
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 40V 10A L-FLAT | - | Obsolete | Bulk | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.55V @ 10A | 1mA @ 40V | 40V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 420pF @ 10V, 1MHz | |||
|
VIEW |
1,970
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 30V 10A L-FLAT | - | Obsolete | Bulk | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.47V @ 10A | 1mA @ 30V | 30V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 530pF @ 10V, 1MHz | |||
|
VIEW |
748
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 30V 10A L-FLAT | - | Obsolete | Tape & Reel (TR) | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.47V @ 10A | 1mA @ 30V | 30V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 530pF @ 10V, 1MHz | |||
|
VIEW |
1,894
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 30V 10A L-FLAT | - | Obsolete | Tape & Reel (TR) | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.47V @ 10A | 1mA @ 30V | 30V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 530pF @ 10V, 1MHz | |||
|
VIEW |
3,695
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 30V 10A L-FLAT | - | Obsolete | Bulk | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.47V @ 10A | 1mA @ 30V | 30V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 530pF @ 10V, 1MHz | |||
|
VIEW |
3,692
In-stock
|
Renesas Electronics America | DIODE GEN PURP 600V 10A TO220FP | - | Discontinued at Digi-Key | Tube | Through Hole | TO-220-2 Full Pack | TO-220FP-2L | Standard | 10A (DC) | 3V @ 10A | 1µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 25ns | 150°C (Max) | - |