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6 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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VIEW |
3,331
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A SOD123W | - | Active | Digi-Reel® | Surface Mount | SOD-123W | SOD123W | Standard | 1A | 950mV @ 1A | 1µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 20ns | -55°C ~ 150°C | 40pF @ 4V, 1MHz | ||||
VIEW |
2,396
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A SOD123W | - | Active | Cut Tape (CT) | Surface Mount | SOD-123W | SOD123W | Standard | 1A | 950mV @ 1A | 1µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 20ns | -55°C ~ 150°C | 40pF @ 4V, 1MHz | ||||
VIEW |
1,066
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A SOD123W | - | Active | Tape & Reel (TR) | Surface Mount | SOD-123W | SOD123W | Standard | 1A | 950mV @ 1A | 1µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 20ns | -55°C ~ 150°C | 40pF @ 4V, 1MHz | ||||
VIEW |
2,605
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A SOD123W | - | Active | Digi-Reel® | Surface Mount | SOD-123W | SOD123W | Standard | 1A | 950mV @ 1A | 1µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 20ns | -55°C ~ 150°C | 40pF @ 4V, 1MHz | ||||
VIEW |
3,579
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A SOD123W | - | Active | Cut Tape (CT) | Surface Mount | SOD-123W | SOD123W | Standard | 1A | 950mV @ 1A | 1µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 20ns | -55°C ~ 150°C | 40pF @ 4V, 1MHz | ||||
VIEW |
3,003
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A SOD123W | - | Active | Tape & Reel (TR) | Surface Mount | SOD-123W | SOD123W | Standard | 1A | 950mV @ 1A | 1µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 20ns | -55°C ~ 150°C | 40pF @ 4V, 1MHz |