- Packaging :
- Diode Type :
- Current - Average Rectified (Io) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
- Applied Filters :
126 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
972
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.7V @ 1A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
|
|
VIEW |
1,474
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
|
VIEW |
1,962
In-stock
|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 90V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Schottky | 1A | 800mV @ 1A | 100µA @ 90V | 90V | Fast Recovery = 200mA (Io) | - | -55°C ~ 150°C | - | |||
|
|
VIEW |
1,776
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.7V @ 1A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
|
|
VIEW |
2,045
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.7V @ 1A | 5µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
|
|
VIEW |
2,074
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.7V @ 1A | 5µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
|
|
VIEW |
1,216
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 1A TS-1 | - | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.7V @ 1A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
|
|
VIEW |
1,987
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 1A TS-1 | - | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.7V @ 1A | 5µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
|
|
VIEW |
2,290
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 1000V | - | Fast Recovery = 200mA (Io) | 500ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
|
VIEW |
1,922
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 500ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
|
VIEW |
1,937
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 1000V | - | Fast Recovery = 200mA (Io) | 500ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
|
VIEW |
3,258
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 500ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
|
VIEW |
3,849
In-stock
|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 40V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Schottky | 1A | 550mV @ 1A | 500µA @ 40V | 40V | Fast Recovery = 200mA (Io) | - | -55°C ~ 125°C | - | |||
|
|
VIEW |
988
In-stock
|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 30V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Schottky | 1A | 550mV @ 1A | 500µA @ 30V | 30V | Fast Recovery = 200mA (Io) | - | -55°C ~ 125°C | - | |||
|
|
VIEW |
1,127
In-stock
|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 20V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Schottky | 1A | 550mV @ 1A | 500µA @ 20V | 20V | Fast Recovery = 200mA (Io) | - | -55°C ~ 125°C | - | |||
|
|
VIEW |
2,274
In-stock
|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 40V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Schottky | 1A | 550mV @ 1A | 500µA @ 40V | 40V | Fast Recovery = 200mA (Io) | - | -55°C ~ 125°C | - | |||
|
|
VIEW |
1,636
In-stock
|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 30V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Schottky | 1A | 550mV @ 1A | 500µA @ 30V | 30V | Fast Recovery = 200mA (Io) | - | -55°C ~ 125°C | - | |||
|
|
VIEW |
1,973
In-stock
|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 20V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Schottky | 1A | 550mV @ 1A | 500µA @ 20V | 20V | Fast Recovery = 200mA (Io) | - | -55°C ~ 125°C | - | |||
|
|
VIEW |
1,558
In-stock
|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 40V 1A TS-1 | - | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Schottky | 1A | 550mV @ 1A | 500µA @ 40V | 40V | Fast Recovery = 200mA (Io) | - | -55°C ~ 125°C | - | |||
|
|
VIEW |
1,419
In-stock
|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 30V 1A TS-1 | - | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Schottky | 1A | 550mV @ 1A | 500µA @ 30V | 30V | Fast Recovery = 200mA (Io) | - | -55°C ~ 125°C | - | |||
|
|
VIEW |
1,340
In-stock
|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 20V 1A TS-1 | - | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Schottky | 1A | 550mV @ 1A | 500µA @ 20V | 20V | Fast Recovery = 200mA (Io) | - | -55°C ~ 125°C | - | |||
|
|
VIEW |
3,817
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | - | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
|
VIEW |
779
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 1A TS-1 | - | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
|
VIEW |
3,215
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 1A TS-1 | - | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
|
VIEW |
1,890
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 600MA TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 600mA | 950mV @ 600mA | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | 9pF @ 4V, 1MHz | |||
|
|
VIEW |
3,822
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 150V 600MA TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 600mA | 950mV @ 600mA | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | 9pF @ 4V, 1MHz | |||
|
|
VIEW |
1,007
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 600MA TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 600mA | 950mV @ 600mA | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | 9pF @ 4V, 1MHz | |||
|
|
VIEW |
2,471
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 600MA TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 600mA | 950mV @ 600mA | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | 9pF @ 4V, 1MHz | |||
|
|
VIEW |
3,583
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 600MA TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 600mA | 950mV @ 600mA | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | 9pF @ 4V, 1MHz | |||
|
|
VIEW |
1,548
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 150V 600MA TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 600mA | 950mV @ 600mA | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | 9pF @ 4V, 1MHz | |||
