- Packaging :
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- Diode Type :
- Current - Average Rectified (Io) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
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11 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
1,519
In-stock
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Central Semiconductor Corp | DIODE SCHOTTKY 650V 10A DPAK | - | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | Schottky | 10A | 1.7V @ 10A | 125µA @ 650V | 650V | Fast Recovery = 200mA (Io) | - | -55°C ~ 175°C | 28pF @ 600V, 1MHz | |||
|
VIEW |
1,874
In-stock
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | Silicon Carbide Schottky | 33A (DC) | 1.7V @ 10A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 690pF @ 0V, 1MHz | |||
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|
VIEW |
3,242
In-stock
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | Silicon Carbide Schottky | 25.5A (DC) | 1.7V @ 8A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 550pF @ 0V, 1MHz | |||
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|
VIEW |
1,266
In-stock
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ON Semiconductor | 650V 10A SIC SBD | - | Active | Digi-Reel® | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | Silicon Carbide Schottky | 18A (DC) | 1.75V @ 10A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 575pF @ 1V, 100kHz | |||
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|
VIEW |
2,176
In-stock
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ON Semiconductor | 650V 10A SIC SBD | - | Active | Cut Tape (CT) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | Silicon Carbide Schottky | 18A (DC) | 1.75V @ 10A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 575pF @ 1V, 100kHz | |||
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|
VIEW |
2,854
In-stock
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ON Semiconductor | 650V 10A SIC SBD | - | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | Silicon Carbide Schottky | 18A (DC) | 1.75V @ 10A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 575pF @ 1V, 100kHz | |||
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|
VIEW |
1,732
In-stock
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | Silicon Carbide Schottky | 21.5A (DC) | 1.7V @ 5A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 424pF @ 0V, 1MHz | |||
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|
VIEW |
2,695
In-stock
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | Silicon Carbide Schottky | 11A (DC) | 1.7V @ 3A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 181pF @ 0V, 1MHz | |||
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|
VIEW |
1,908
In-stock
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Central Semiconductor Corp | DIODE SCHOTTKY 650V 10A DPAK | - | Active | Tube | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 125µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 325pF @ 1V, 1MHz | |||
|
VIEW |
3,162
In-stock
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Cree/Wolfspeed | DIODE SCHOTTKY 650V 2A TO252-2 | - | Active | Tube | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | Silicon Carbide Schottky | 20A (DC) | 1.7V @ 6A | 50µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 295pF @ 0V, 1MHz | |||
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|
VIEW |
3,947
In-stock
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Cree/Wolfspeed | DIODE SCHOTTKY 650V 25.5A TO252 | - | Active | Tube | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | Silicon Carbide Schottky | 25.5A (DC) | 1.8V @ 8A | 50µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 395pF @ 0V, 1MHz | |||
