Current - Average Rectified (Io) :
Voltage - Forward (Vf) (Max) @ If :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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SF47GHA0G
RFQ
VIEW
RFQ
2,783
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 500V 4A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.7V @ 4A 5µA @ 500V 500V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF37GHA0G
RFQ
VIEW
RFQ
3,433
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 500V 3A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.7V @ 3A 5µA @ 500V 500V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SF37G A0G
RFQ
VIEW
RFQ
1,380
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 500V 3A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.7V @ 3A 5µA @ 500V 500V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SF67G A0G
RFQ
VIEW
RFQ
2,951
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 500V 6A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 6A 1.7V @ 6A 5µA @ 500V 500V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 50pF @ 4V, 1MHz
SF67GHA0G
RFQ
VIEW
RFQ
3,106
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 500V 6A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 6A 1.7V @ 6A 5µA @ 500V 500V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 50pF @ 4V, 1MHz
SF47G A0G
RFQ
VIEW
RFQ
2,254
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 500V 4A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.7V @ 4A 5µA @ 500V 500V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz