Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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GP30DLHE3/72
RFQ
VIEW
RFQ
3,896
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 3A Automotive, AEC-Q101 Obsolete Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.1V @ 3A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 5µs -65°C ~ 175°C 40pF @ 4V, 1MHz
GP30DL-E3/72
RFQ
VIEW
RFQ
2,466
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 3A Automotive, AEC-Q101 Obsolete Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.1V @ 3A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 5µs -65°C ~ 175°C 40pF @ 4V, 1MHz
SF64GHB0G
RFQ
VIEW
RFQ
2,817
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 6A 975mV @ 6A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
SF44GHB0G
RFQ
VIEW
RFQ
680
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 4A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 4A 1V @ 4A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
SF34GHB0G
RFQ
VIEW
RFQ
1,300
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 950mV @ 3A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
UG54GHB0G
RFQ
VIEW
RFQ
985
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 5A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 5A 1.05V @ 5A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 20ns -55°C ~ 175°C -
SR320HB0G
RFQ
VIEW
RFQ
2,142
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 200V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Schottky 3A 950mV @ 3A 100µA @ 200V 200V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
1N5402GHB0G
RFQ
VIEW
RFQ
3,130
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 25pF @ 4V, 1MHz
MUR4L20HB0G
RFQ
VIEW
RFQ
3,222
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 4A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 4A 890mV @ 4A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 25ns -55°C ~ 175°C 65pF @ 4V, 1MHz
MUR420HB0G
RFQ
VIEW
RFQ
3,624
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 4A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 4A 890mV @ 4A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 25ns -55°C ~ 175°C 65pF @ 4V, 1MHz
SR520HB0G
RFQ
VIEW
RFQ
3,165
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 200V 5A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Schottky 5A 1.05V @ 5A 100µA @ 200V 200V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -