Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
GLOBAL STOCKS
GP30DLHE3/72
RFQ
VIEW
RFQ
3,896
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 3A Automotive, AEC-Q101 Obsolete Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.1V @ 3A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 5µs -65°C ~ 175°C 40pF @ 4V, 1MHz
GP30DL-E3/72
RFQ
VIEW
RFQ
2,466
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 3A Automotive, AEC-Q101 Obsolete Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.1V @ 3A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 5µs -65°C ~ 175°C 40pF @ 4V, 1MHz
SF38GHB0G
RFQ
VIEW
RFQ
1,734
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.7V @ 3A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SF37GHB0G
RFQ
VIEW
RFQ
1,403
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 500V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.7V @ 3A 5µA @ 500V 500V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SF36GHB0G
RFQ
VIEW
RFQ
2,011
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.3V @ 3A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SF35GHB0G
RFQ
VIEW
RFQ
3,869
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.3V @ 3A 5µA @ 300V 300V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SF34GHB0G
RFQ
VIEW
RFQ
1,300
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 950mV @ 3A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF33GHB0G
RFQ
VIEW
RFQ
2,093
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 150V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 950mV @ 3A 5µA @ 150V 150V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF32GHB0G
RFQ
VIEW
RFQ
1,156
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 950mV @ 3A 5µA @ 100V 100V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF31GHB0G
RFQ
VIEW
RFQ
3,020
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 950mV @ 3A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SR320HB0G
RFQ
VIEW
RFQ
2,142
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 200V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Schottky 3A 950mV @ 3A 100µA @ 200V 200V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
SR315HB0G
RFQ
VIEW
RFQ
1,893
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Schottky 3A 850mV @ 3A 100µA @ 150V 150V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
SR310HB0G
RFQ
VIEW
RFQ
2,519
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Schottky 3A 850mV @ 3A 100µA @ 100V 100V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
SR309HB0G
RFQ
VIEW
RFQ
3,816
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 90V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Schottky 3A 850mV @ 3A 100µA @ 90V 90V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
SR306HB0G
RFQ
VIEW
RFQ
1,133
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Schottky 3A 700mV @ 3A 500µA @ 60V 60V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
SR305HB0G
RFQ
VIEW
RFQ
612
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Schottky 3A 700mV @ 3A 500µA @ 50V 50V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
SR304HB0G
RFQ
VIEW
RFQ
2,456
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Schottky 3A 550mV @ 3A 500µA @ 40V 40V Fast Recovery = 200mA (Io) - -55°C ~ 125°C -
SR303HB0G
RFQ
VIEW
RFQ
2,628
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Schottky 3A 550mV @ 3A 500µA @ 30V 30V Fast Recovery = 200mA (Io) - -55°C ~ 125°C -
SR302HB0G
RFQ
VIEW
RFQ
3,164
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 20V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Schottky 3A 550mV @ 3A 500µA @ 20V 20V Fast Recovery = 200mA (Io) - -55°C ~ 125°C -
1N5401GHB0G
RFQ
VIEW
RFQ
1,915
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.1V @ 3A 5µA @ 100V 100V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 25pF @ 4V, 1MHz
1N5400GHB0G
RFQ
VIEW
RFQ
1,322
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.1V @ 3A 5µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 25pF @ 4V, 1MHz
1N5408GHB0G
RFQ
VIEW
RFQ
1,142
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 5µA @ 1000V - Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 25pF @ 4V, 1MHz
1N5407GHB0G
RFQ
VIEW
RFQ
2,733
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 5µA @ 800V 800V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 25pF @ 4V, 1MHz
1N5406GHB0G
RFQ
VIEW
RFQ
3,974
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 5µA @ 600V 600V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 25pF @ 4V, 1MHz
1N5404GHB0G
RFQ
VIEW
RFQ
2,113
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 5µA @ 400V 400V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 25pF @ 4V, 1MHz
1N5402GHB0G
RFQ
VIEW
RFQ
3,130
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 25pF @ 4V, 1MHz
1N5822HB0G
RFQ
VIEW
RFQ
1,712
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Schottky 3A 525mV @ 3A 500µA @ 40V 40V Fast Recovery = 200mA (Io) - -55°C ~ 125°C 200pF @ 4V, 1MHz
1N5821HB0G
RFQ
VIEW
RFQ
999
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Schottky 3A 500mV @ 3A 500µA @ 30V 30V Fast Recovery = 200mA (Io) - -55°C ~ 125°C 200pF @ 4V, 1MHz
1N5820HB0G
RFQ
VIEW
RFQ
2,159
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 20V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Schottky 3A 475mV @ 3A 500µA @ 20V 20V Fast Recovery = 200mA (Io) - -55°C ~ 125°C 200pF @ 4V, 1MHz