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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Mounting Type	Package / Case	Supplier Device Package	Diode Type	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Speed	Reverse Recovery Time (trr)	Operating Temperature - Junction	Capacitance @ Vr, F
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	SF48GHB0G	RFQ VIEW	PDF RFQ	2,602 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 4A DO201AD		Automotive, AEC-Q101	Active	Bulk	Through Hole	DO-201AD, Axial	DO-201AD	Standard	4A	1.7V @ 4A	5µA @ 600V	600V	Fast Recovery = 200mA (Io)	35ns	-55°C ~ 150°C	80pF @ 4V, 1MHz
	SF48GHA0G	RFQ VIEW	PDF RFQ	2,222 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 4A DO201AD		Automotive, AEC-Q101	Active	Tape & Box (TB)	Through Hole	DO-201AD, Axial	DO-201AD	Standard	4A	1.7V @ 4A	5µA @ 600V	600V	Fast Recovery = 200mA (Io)	35ns	-55°C ~ 150°C	80pF @ 4V, 1MHz
	SF48GHR0G	RFQ VIEW	PDF RFQ	1,620 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 4A DO201AD		Automotive, AEC-Q101	Active	Tape & Reel (TR)	Through Hole	DO-201AD, Axial	DO-201AD	Standard	4A	1.7V @ 4A	5µA @ 600V	600V	Fast Recovery = 200mA (Io)	35ns	-55°C ~ 150°C	80pF @ 4V, 1MHz
	SF38GHB0G	RFQ VIEW	PDF RFQ	1,734 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO201AD		Automotive, AEC-Q101	Active	Bulk	Through Hole	DO-201AD, Axial	DO-201AD	Standard	3A	1.7V @ 3A	5µA @ 600V	600V	Fast Recovery = 200mA (Io)	35ns	-55°C ~ 150°C	60pF @ 4V, 1MHz
	SF38GHA0G	RFQ VIEW	PDF RFQ	2,248 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO201AD		Automotive, AEC-Q101	Active	Tape & Box (TB)	Through Hole	DO-201AD, Axial	DO-201AD	Standard	3A	1.7V @ 3A	5µA @ 600V	600V	Fast Recovery = 200mA (Io)	35ns	-55°C ~ 150°C	60pF @ 4V, 1MHz
	SF38GHR0G	RFQ VIEW	PDF RFQ	3,884 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO201AD		Automotive, AEC-Q101	Active	Tape & Reel (TR)	Through Hole	DO-201AD, Axial	DO-201AD	Standard	3A	1.7V @ 3A	5µA @ 600V	600V	Fast Recovery = 200mA (Io)	35ns	-55°C ~ 150°C	60pF @ 4V, 1MHz
	1N5406GHA0G	RFQ VIEW	PDF RFQ	3,700 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO201AD		Automotive, AEC-Q101	Active	Tape & Box (TB)	Through Hole	DO-201AD, Axial	DO-201AD	Standard	3A	1V @ 3A	5µA @ 600V	600V	Standard Recovery >500ns, > 200mA (Io)	-	-55°C ~ 150°C	25pF @ 4V, 1MHz
	1N5406GHB0G	RFQ VIEW	PDF RFQ	3,974 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO201AD		Automotive, AEC-Q101	Active	Bulk	Through Hole	DO-201AD, Axial	DO-201AD	Standard	3A	1V @ 3A	5µA @ 600V	600V	Standard Recovery >500ns, > 200mA (Io)	-	-55°C ~ 150°C	25pF @ 4V, 1MHz
	1N5406GHR0G	RFQ VIEW	PDF RFQ	2,196 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO201AD		Automotive, AEC-Q101	Active	Tape & Reel (TR)	Through Hole	DO-201AD, Axial	DO-201AD	Standard	3A	1V @ 3A	5µA @ 600V	600V	Standard Recovery >500ns, > 200mA (Io)	-	-55°C ~ 150°C	25pF @ 4V, 1MHz
	SF68GHB0G	RFQ VIEW	PDF RFQ	2,752 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 6A DO201AD		Automotive, AEC-Q101	Active	Bulk	Through Hole	DO-201AD, Axial	DO-201AD	Standard	6A	1.7V @ 6A	5µA @ 600V	600V	Fast Recovery = 200mA (Io)	35ns	-55°C ~ 150°C	50pF @ 4V, 1MHz
	SF68GHA0G	RFQ VIEW	PDF RFQ	1,901 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 6A DO201AD		Automotive, AEC-Q101	Active	Tape & Box (TB)	Through Hole	DO-201AD, Axial	DO-201AD	Standard	6A	1.7V @ 6A	5µA @ 600V	600V	Fast Recovery = 200mA (Io)	35ns	-55°C ~ 150°C	50pF @ 4V, 1MHz
	SF68GHR0G	RFQ VIEW	PDF RFQ	2,162 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 6A DO201AD		Automotive, AEC-Q101	Active	Tape & Reel (TR)	Through Hole	DO-201AD, Axial	DO-201AD	Standard	6A	1.7V @ 6A	5µA @ 600V	600V	Fast Recovery = 200mA (Io)	35ns	-55°C ~ 150°C	50pF @ 4V, 1MHz

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