Current - Reverse Leakage @ Vr :
Voltage - DC Reverse (Vr) (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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SF38GHB0G
RFQ
VIEW
RFQ
1,734
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.7V @ 3A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SF37GHB0G
RFQ
VIEW
RFQ
1,403
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 500V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.7V @ 3A 5µA @ 500V 500V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SF38GHA0G
RFQ
VIEW
RFQ
2,248
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 3A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.7V @ 3A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SF37GHA0G
RFQ
VIEW
RFQ
3,433
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 500V 3A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.7V @ 3A 5µA @ 500V 500V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SF38GHR0G
RFQ
VIEW
RFQ
3,884
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 3A DO201AD Automotive, AEC-Q101 Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.7V @ 3A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SF37GHR0G
RFQ
VIEW
RFQ
2,897
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 500V 3A DO201AD Automotive, AEC-Q101 Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.7V @ 3A 5µA @ 500V 500V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz