Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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3,182
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Taiwan Semiconductor Corporation DIODE GEN PURP 600V 6A R-6 - Active Bulk Through Hole R6, Axial R-6 Standard 6A 1.7V @ 6A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 65pF @ 4V, 1MHz
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1,486
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Taiwan Semiconductor Corporation DIODE GEN PURP 400V 6A R-6 - Active Bulk Through Hole R6, Axial R-6 Standard 6A 1.3V @ 6A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
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2,843
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Taiwan Semiconductor Corporation DIODE GEN PURP 300V 6A R-6 - Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 300V 300V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
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1,083
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Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A R-6 - Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
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2,881
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Taiwan Semiconductor Corporation DIODE GEN PURP 100V 6A R-6 - Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 100V 100V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
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2,718
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Taiwan Semiconductor Corporation DIODE GEN PURP 50V 6A R-6 - Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
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1,075
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Micro Commercial Co DIODE GEN PURP 50V 10A R-6 - Active Bulk Through Hole R6, Axial R-6 Standard 10A 1.3V @ 10A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 150ns -55°C ~ 150°C -
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751
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Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 15A R-6 - Active Bulk Through Hole R6, Axial R-6 Schottky 15A 550mV @ 15A 500µA @ 40V 40V Fast Recovery = 200mA (Io) - -50°C ~ 150°C -
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1,367
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Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 15A R-6 - Active Bulk Through Hole R6, Axial R-6 Schottky 15A 550mV @ 15A 500µA @ 30V 30V Fast Recovery = 200mA (Io) - -50°C ~ 150°C -
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1,825
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Taiwan Semiconductor Corporation DIODE SCHOTTKY 20V 15A R-6 - Active Bulk Through Hole R6, Axial R-6 Schottky 15A 550mV @ 15A 500µA @ 20V 20V Fast Recovery = 200mA (Io) - -50°C ~ 150°C -
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2,234
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Taiwan Semiconductor Corporation DIODE SCHOTTKY 45V 15A R-6 - Active Bulk Through Hole R6, Axial R-6 Schottky 15A 560mV @ 15A 150µA @ 45V 45V Fast Recovery = 200mA (Io) - 200°C (Max) -
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2,337
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Taiwan Semiconductor Corporation DIODE SCHOTTKY 45V 20A R-6 - Active Bulk Through Hole R6, Axial R-6 Schottky 20A 550mV @ 20A 150µA @ 45V 45V Fast Recovery = 200mA (Io) - 200°C (Max) -
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1,357
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Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 15A R-6 Automotive, AEC-Q101 Active Bulk Through Hole R6, Axial R-6 Schottky 15A 550mV @ 15A 500µA @ 40V 40V Fast Recovery = 200mA (Io) - -50°C ~ 150°C -
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1,197
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Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 15A R-6 Automotive, AEC-Q101 Active Bulk Through Hole R6, Axial R-6 Schottky 15A 550mV @ 15A 500µA @ 30V 30V Fast Recovery = 200mA (Io) - -50°C ~ 150°C -
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2,533
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Taiwan Semiconductor Corporation DIODE SCHOTTKY 20V 15A R-6 Automotive, AEC-Q101 Active Bulk Through Hole R6, Axial R-6 Schottky 15A 550mV @ 15A 500µA @ 20V 20V Fast Recovery = 200mA (Io) - -50°C ~ 150°C -