Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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1,617
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Taiwan Semiconductor Corporation DIODE GEN PURP 6A R-6 Automotive, AEC-Q101 Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 1000V 1000V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
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2,121
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Taiwan Semiconductor Corporation DIODE GEN PURP 800V 6A R-6 Automotive, AEC-Q101 Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 800V 800V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
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663
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Taiwan Semiconductor Corporation DIODE GEN PURP 600V 6A R-6 Automotive, AEC-Q101 Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 600V 600V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
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1,327
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Taiwan Semiconductor Corporation DIODE GEN PURP 400V 6A R-6 Automotive, AEC-Q101 Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 400V 400V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
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629
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Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A R-6 Automotive, AEC-Q101 Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
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1,878
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Taiwan Semiconductor Corporation DIODE GEN PURP 100V 6A R-6 Automotive, AEC-Q101 Active Bulk Through Hole R6, Axial R-6 Standard 6A 1.1V @ 6A 10µA @ 100V 100V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
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1,028
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Taiwan Semiconductor Corporation DIODE GEN PURP 50V 6A R-6 Automotive, AEC-Q101 Active Bulk Through Hole R6, Axial R-6 Standard 6A 1.1V @ 6A 10µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
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1,357
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Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 15A R-6 Automotive, AEC-Q101 Active Bulk Through Hole R6, Axial R-6 Schottky 15A 550mV @ 15A 500µA @ 40V 40V Fast Recovery = 200mA (Io) - -50°C ~ 150°C -
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1,197
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Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 15A R-6 Automotive, AEC-Q101 Active Bulk Through Hole R6, Axial R-6 Schottky 15A 550mV @ 15A 500µA @ 30V 30V Fast Recovery = 200mA (Io) - -50°C ~ 150°C -
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2,533
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Taiwan Semiconductor Corporation DIODE SCHOTTKY 20V 15A R-6 Automotive, AEC-Q101 Active Bulk Through Hole R6, Axial R-6 Schottky 15A 550mV @ 15A 500µA @ 20V 20V Fast Recovery = 200mA (Io) - -50°C ~ 150°C -