- Manufacture :
- Series :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
- Applied Filters :
15 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Operating Temperature - Junction | Capacitance @ Vr, F | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | |||||||||||||||||||||
|
VIEW |
1,529
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 6A R-6 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 1000V | 1000V | Standard Recovery >500ns, > 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
VIEW |
3,127
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 6A R-6 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
VIEW |
2,833
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A R-6 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
VIEW |
953
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 6A R-6 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 400V | 400V | Standard Recovery >500ns, > 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
VIEW |
603
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 6A R-6 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
VIEW |
2,079
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 6A R-6 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1.1V @ 6A | 10µA @ 100V | 100V | Standard Recovery >500ns, > 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
VIEW |
1,730
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 6A R-6 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1.1V @ 6A | 10µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
VIEW |
2,993
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 6A R-6 | - | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
VIEW |
3,425
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A R-6 | - | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
VIEW |
2,899
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 6A R-6 | - | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 400V | 400V | Standard Recovery >500ns, > 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
VIEW |
985
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 6A R-6 | - | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
VIEW |
1,913
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 6A R-6 | - | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1.1V @ 6A | 10µA @ 100V | 100V | Standard Recovery >500ns, > 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
VIEW |
2,778
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 6A R-6 | - | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 1000V | 1000V | Standard Recovery >500ns, > 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
VIEW |
800
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 6A R-6 | - | Active | Tape & Box (TB) | Through Hole | - | R-6 | Standard | 6A | 1.1V @ 6A | 10µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
VIEW |
2,109
In-stock
|
SMC Diode Solutions | DIODE GEN PURP 600V 6A R-6 | - | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 950mV @ 6A | 10µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | -65°C ~ 175°C | 150pF @ 4V, 1MHz |