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6 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Operating Temperature - Junction | Capacitance @ Vr, F | |
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VIEW |
2,121
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 6A R-6 | Automotive, AEC-Q101 | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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VIEW |
884
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 6A R-6 | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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VIEW |
3,127
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 6A R-6 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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VIEW |
3,133
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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VIEW |
2,993
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 6A R-6 | - | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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VIEW |
3,707
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 6A R-6 | - | Active | Tape & Reel (TR) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz |