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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Series	Part Status	Packaging	Mounting Type	Package / Case	Supplier Device Package	Diode Type	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Speed	Reverse Recovery Time (trr)	Operating Temperature - Junction	Capacitance @ Vr, F
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	S3K	RFQ VIEW	PDF RFQ	3,112 In-stock	Micro Commercial Co	DIODE GEN PURP 800V 3A DO214AB	-	Obsolete	Cut Tape (CT)	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	Standard	3A	1.2V @ 3A	10µA @ 800V	800V	Standard Recovery >500ns, > 200mA (Io)	-	-55°C ~ 150°C	-
	S3K-E3/57T	RFQ VIEW	PDF RFQ	1,101 In-stock	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 3A DO214AB	-	Active	Cut Tape (CT)	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	Standard	3A	1.15V @ 2.5A	10µA @ 800V	800V	Standard Recovery >500ns, > 200mA (Io)	2.5µs	-55°C ~ 150°C	60pF @ 4V, 1MHz
	US5K-TP	RFQ VIEW	PDF RFQ	3,142 In-stock	Micro Commercial Co	5A,800V, SUPER FAST RECOVERY REC	-	Active	Cut Tape (CT)	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	Standard	5A	1.7V @ 5A	10µA @ 800V	800V	Fast Recovery = 200mA (Io)	75ns	-55°C ~ 150°C	-
	S3K R7G	RFQ VIEW	PDF RFQ	2,456 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO214AB	-	Not For New Designs	Cut Tape (CT)	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	Standard	3A	1.15V @ 3A	10µA @ 800V	800V	Fast Recovery = 200mA (Io)	-	-55°C ~ 150°C	60pF @ 4V, 1MHz
	S5K-E3/57T	RFQ VIEW	PDF RFQ	2,290 In-stock	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 5A DO214AB	-	Active	Cut Tape (CT)	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	Standard	5A	1.15V @ 5A	10µA @ 800V	800V	Standard Recovery >500ns, > 200mA (Io)	2.5µs	-55°C ~ 150°C	40pF @ 4V, 1MHz
	RS3K-E3/57T	RFQ VIEW	PDF RFQ	1,367 In-stock	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 3A DO214AB	-	Active	Cut Tape (CT)	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	Standard	3A	1.3V @ 2.5A	10µA @ 800V	800V	Fast Recovery = 200mA (Io)	500ns	-55°C ~ 150°C	34pF @ 4V, 1MHz
	S4K V7G	RFQ VIEW	PDF RFQ	3,194 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 4A DO214AB	-	Active	Cut Tape (CT)	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	Standard	4A	1.15V @ 4A	10µA @ 800V	800V	Standard Recovery >500ns, > 200mA (Io)	1.5µs	-55°C ~ 150°C	60pF @ 4V, 1MHz
	S5KL-TP	RFQ VIEW	PDF RFQ	1,539 In-stock	Micro Commercial Co	DIODE GEN PURP 800V 5A DO214AB	-	Active	Cut Tape (CT)	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	Standard	5A	1.2V @ 5A	10µA @ 800V	800V	Standard Recovery >500ns, > 200mA (Io)	-	-55°C ~ 150°C	-
	HS5K V7G	RFQ VIEW	PDF RFQ	1,067 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 5A DO214AB	-	Active	Cut Tape (CT)	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	Standard	5A	1.7V @ 5A	10µA @ 800V	800V	Fast Recovery = 200mA (Io)	75ns	-55°C ~ 150°C	50pF @ 4V, 1MHz
	HS5K R7G	RFQ VIEW	PDF RFQ	2,573 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 5A DO214AB	-	Not For New Designs	Cut Tape (CT)	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	Standard	5A	1.7V @ 5A	10µA @ 800V	800V	Fast Recovery = 200mA (Io)	75ns	-55°C ~ 150°C	50pF @ 4V, 1MHz
	S8KC R7G	RFQ VIEW	PDF RFQ	3,239 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 8A DO214AB	-	Not For New Designs	Cut Tape (CT)	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	Standard	8A	985mV @ 8A	10µA @ 800V	800V	Fast Recovery = 200mA (Io)	-	-55°C ~ 150°C	48pF @ 4V, 1MHz
	S8KC V7G	RFQ VIEW	PDF RFQ	1,292 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 8A DO214AB	-	Active	Cut Tape (CT)	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	Standard	8A	985mV @ 8A	10µA @ 800V	800V	Standard Recovery >500ns, > 200mA (Io)	-	-55°C ~ 150°C	48pF @ 4V, 1MHz
	S3K-E3/9AT	RFQ VIEW	PDF RFQ	2,967 In-stock	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 3A DO214AB	-	Active	Cut Tape (CT)	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	Standard	3A	1.15V @ 2.5A	10µA @ 800V	800V	Standard Recovery >500ns, > 200mA (Io)	2.5µs	-55°C ~ 150°C	60pF @ 4V, 1MHz
	RS3K-E3/9AT	RFQ VIEW	PDF RFQ	2,993 In-stock	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 3A DO214AB	-	Active	Cut Tape (CT)	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	Standard	3A	1.3V @ 2.5A	10µA @ 800V	800V	Fast Recovery = 200mA (Io)	500ns	-55°C ~ 150°C	34pF @ 4V, 1MHz
	S3K-TP	RFQ VIEW	PDF RFQ	804 In-stock	Micro Commercial Co	DIODE GEN PURP 800V 3A DO214AB	-	Active	Cut Tape (CT)	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	Standard	3A	1.2V @ 3A	10µA @ 800V	800V	Standard Recovery >500ns, > 200mA (Io)	-	-55°C ~ 150°C	-
	S4K R7G	RFQ VIEW	PDF RFQ	3,782 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 4A DO214AB	-	Not For New Designs	Cut Tape (CT)	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	Standard	4A	1.15V @ 4A	10µA @ 800V	800V	Fast Recovery = 200mA (Io)	-	-55°C ~ 150°C	60pF @ 4V, 1MHz
	S5K R7G	RFQ VIEW	PDF RFQ	1,432 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 5A DO214AB	-	Not For New Designs	Cut Tape (CT)	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	Standard	5A	1.15V @ 5A	10µA @ 800V	800V	Standard Recovery >500ns, > 200mA (Io)	1.5µs	-55°C ~ 150°C	60pF @ 4V, 1MHz
	S5K V7G	RFQ VIEW	PDF RFQ	2,118 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 5A DO214AB	-	Active	Cut Tape (CT)	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	Standard	5A	1.15V @ 5A	10µA @ 800V	800V	Standard Recovery >500ns, > 200mA (Io)	1.5µs	-55°C ~ 150°C	60pF @ 4V, 1MHz
	S3K V7G	RFQ VIEW	PDF RFQ	2,408 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO214AB	-	Active	Cut Tape (CT)	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	Standard	3A	1.15V @ 3A	10µA @ 800V	800V	Standard Recovery >500ns, > 200mA (Io)	1.5µs	-55°C ~ 150°C	60pF @ 4V, 1MHz
	HS3K V7G	RFQ VIEW	PDF RFQ	3,583 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO214AB	-	Active	Cut Tape (CT)	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	Standard	3A	1.7V @ 3A	10µA @ 800V	800V	Fast Recovery = 200mA (Io)	75ns	-55°C ~ 150°C	50pF @ 4V, 1MHz
	HS3K R7G	RFQ VIEW	PDF RFQ	3,144 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO214AB	-	Not For New Designs	Cut Tape (CT)	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	Standard	3A	1.7V @ 3A	10µA @ 800V	800V	Fast Recovery = 200mA (Io)	75ns	-55°C ~ 150°C	50pF @ 4V, 1MHz

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