- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Applied Filters :
12 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
630
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 950mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 30ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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VIEW |
648
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 150V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 950mV @ 4A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 30ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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VIEW |
3,037
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 950mV @ 4A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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VIEW |
3,796
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 950mV @ 4A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 30ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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VIEW |
2,982
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 950mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 30ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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VIEW |
3,653
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 150V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 950mV @ 4A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 30ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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VIEW |
1,603
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 950mV @ 4A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 30ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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|
VIEW |
1,320
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 950mV @ 4A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 30ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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VIEW |
1,691
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 3.5A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3.5A | 1.1V @ 3.5A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 20ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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VIEW |
3,556
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 3.5A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3.5A | 1.1V @ 3.5A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 20ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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|
VIEW |
1,007
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 150V 3.5A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3.5A | 1.1V @ 3.5A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 20ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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VIEW |
1,688
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 3.5A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3.5A | 1.1V @ 3.5A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 20ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
