- Part Status :
- Voltage - Forward (Vf) (Max) @ If :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
1,368
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 3A DO201AD | - | Obsolete | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 150ns | -50°C ~ 125°C | 28pF @ 4V, 1MHz | |||
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VIEW |
1,218
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 5A DO201AD | - | Obsolete | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 5A | 1.35V @ 5A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 200ns | -50°C ~ 125°C | 28pF @ 4V, 1MHz | |||
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VIEW |
1,243
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.28V @ 4A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 75ns | -65°C ~ 175°C | - | |||
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VIEW |
817
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.28V @ 4A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 75ns | -65°C ~ 175°C | - | |||
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VIEW |
3,680
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 45pF @ 4V, 1MHz | |||
