- Mounting Type :
- Supplier Device Package :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Capacitance @ Vr, F :
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11 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
3,897
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 1A DO213AB | SUPERECTIFIER® | Active | Cut Tape (CT) | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | Standard | 1A | 1.3V @ 1A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 250ns | -65°C ~ 175°C | 15pF @ 4V, 1MHz | |||
|
VIEW |
654
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 1A DO204AL | SUPERECTIFIER® | Active | Cut Tape (CT) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.3V @ 1A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 250ns | -65°C ~ 175°C | 15pF @ 4V, 1MHz | |||
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VIEW |
3,171
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 500MA DO213 | SUPERECTIFIER® | Active | Cut Tape (CT) | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | Standard | 500mA | 1.3V @ 500mA | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 250ns | -65°C ~ 175°C | 4pF @ 4V, 1MHz | |||
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VIEW |
2,611
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 1A DO213AB | SUPERECTIFIER® | Active | Cut Tape (CT) | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | Standard | 1A | 1.3V @ 1A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 250ns | -65°C ~ 175°C | 15pF @ 4V, 1MHz | |||
|
VIEW |
3,954
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 1A DO214BA | SUPERECTIFIER® | Active | Cut Tape (CT) | Surface Mount | DO-214BA | DO-214BA (GF1) | Standard | 1A | 1.3V @ 1A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 250ns | -65°C ~ 175°C | 8.5pF @ 4V, 1MHz | |||
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|
VIEW |
2,138
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 500MA DO213 | SUPERECTIFIER® | Active | Cut Tape (CT) | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | Standard | 500mA | 1.3V @ 500mA | 5µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 250ns | -65°C ~ 175°C | 4pF @ 4V, 1MHz | |||
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|
VIEW |
1,974
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 1A DO213AB | SUPERECTIFIER® | Active | Cut Tape (CT) | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | Standard | 1A | 1.3V @ 1A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 250ns | -65°C ~ 175°C | 15pF @ 4V, 1MHz | |||
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|
VIEW |
2,598
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 1A DO213AB | SUPERECTIFIER® | Active | Cut Tape (CT) | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | Standard | 1A | 1.3V @ 1A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 250ns | -65°C ~ 175°C | 15pF @ 4V, 1MHz | |||
|
VIEW |
1,335
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 1A DO204AC | SUPERECTIFIER® | Active | Cut Tape (CT) | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard | 1A | 1.2V @ 1A | 500nA @ 600V | 600V | Fast Recovery = 200mA (Io) | 250ns | -65°C ~ 175°C | 25pF @ 4V, 1MHz | |||
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|
VIEW |
1,974
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 1A DO214BA | SUPERECTIFIER® | Active | Cut Tape (CT) | Surface Mount | DO-214BA | DO-214BA (GF1) | Standard | 1A | 1.3V @ 1A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 250ns | -65°C ~ 175°C | 8.5pF @ 4V, 1MHz | |||
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|
VIEW |
3,990
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 500MA DO213 | SUPERECTIFIER® | Active | Cut Tape (CT) | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | Standard | 500mA | 1.3V @ 500mA | 5µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 250ns | -65°C ~ 175°C | 4pF @ 4V, 1MHz | |||
