- Part Status :
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6 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | |
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VIEW |
1,199
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 6A P600 | - | Last Time Buy | Tape & Box (TB) | Through Hole | P600, Axial | P600 | Standard | 6A | 1.1V @ 6A | 5µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | 5.5µs | -55°C ~ 175°C | |||
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VIEW |
1,817
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 6A P600 | - | Last Time Buy | Tape & Reel (TR) | Through Hole | P600, Axial | P600 | Standard | 6A | 1.1V @ 6A | 5µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | 5.5µs | -55°C ~ 175°C | |||
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VIEW |
615
In-stock
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Vishay Semiconductor Diodes Division | DIODE AVALANCHE 50V 1.5A SOD57 | - | Active | Tape & Reel (TR) | Through Hole | SOD-57, Axial | SOD-57 | Avalanche | 1.5A | 1.1V @ 1A | 1µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | 4µs | -55°C ~ 175°C | |||
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VIEW |
1,523
In-stock
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Vishay Semiconductor Diodes Division | DIODE AVALANCHE 50V 1.5A SOD57 | - | Active | Tape & Box (TB) | Through Hole | SOD-57, Axial | SOD-57 | Avalanche | 1.5A | 1.1V @ 1A | 1µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | 4µs | -55°C ~ 175°C | |||
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VIEW |
1,617
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 6A P600 | - | Last Time Buy | Tape & Reel (TR) | Through Hole | P600, Axial | P600 | Standard | 6A | 1.1V @ 6A | 5µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | 5.5µs | -55°C ~ 175°C | |||
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VIEW |
1,452
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 6A P600 | - | Last Time Buy | Tape & Box (TB) | Through Hole | P600, Axial | P600 | Standard | 6A | 1.1V @ 6A | 5µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | 5.5µs | -55°C ~ 175°C |