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6 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | |
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GLOBAL STOCKS | |||||||||||||||||||||
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VIEW |
611
In-stock
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Vishay Semiconductor Diodes Division | DIODE AVALANCHE 1KV 1.25A SOD57 | - | Active | Tape & Reel (TR) | Through Hole | SOD-57, Axial | SOD-57 | Avalanche | 1.25A | 1.5V @ 1A | 5µA @ 1000V | 1000V | Fast Recovery = 200mA (Io) | 100ns | -55°C ~ 175°C | |||
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VIEW |
2,690
In-stock
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Vishay Semiconductor Diodes Division | DIODE AVALANCHE 1KV 1.5A SOD57 | - | Active | Tape & Reel (TR) | Through Hole | SOD-57, Axial | SOD-57 | Avalanche | 1.5A | 1.5V @ 1A | 5µA @ 1000V | 1000V | Fast Recovery = 200mA (Io) | 300ns | -55°C ~ 175°C | |||
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VIEW |
765
In-stock
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Vishay Semiconductor Diodes Division | DIODE AVALANCHE 1KV 1.25A SOD57 | - | Active | Cut Tape (CT) | Through Hole | SOD-57, Axial | SOD-57 | Avalanche | 1.25A | 1.5V @ 1A | 5µA @ 1000V | 1000V | Fast Recovery = 200mA (Io) | 100ns | -55°C ~ 175°C | |||
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VIEW |
3,035
In-stock
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Vishay Semiconductor Diodes Division | DIODE AVALANCHE 1KV 1.25A SOD57 | - | Active | Tape & Box (TB) | Through Hole | SOD-57, Axial | SOD-57 | Avalanche | 1.25A | 1.5V @ 1A | 5µA @ 1000V | 1000V | Fast Recovery = 200mA (Io) | 100ns | -55°C ~ 175°C | |||
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VIEW |
1,232
In-stock
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Vishay Semiconductor Diodes Division | DIODE AVALANCHE 1KV 1.5A SOD57 | - | Active | Cut Tape (CT) | Through Hole | SOD-57, Axial | SOD-57 | Avalanche | 1.5A | 1.5V @ 1A | 5µA @ 1000V | 1000V | Fast Recovery = 200mA (Io) | 300ns | -55°C ~ 175°C | |||
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VIEW |
2,836
In-stock
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Vishay Semiconductor Diodes Division | DIODE AVALANCHE 1KV 1.5A SOD57 | - | Active | Tape & Box (TB) | Through Hole | SOD-57, Axial | SOD-57 | Avalanche | 1.5A | 1.5V @ 1A | 5µA @ 1000V | 1000V | Fast Recovery = 200mA (Io) | 300ns | -55°C ~ 175°C |