Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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AR3PG-M3/86A
RFQ
VIEW
RFQ
2,493
In-stock
Vishay Semiconductor Diodes Division DIODE AVALANCHE 400V 1.8A TO277A eSMP® Discontinued at Digi-Key Cut Tape (CT) Surface Mount TO-277, 3-PowerDFN TO-277A (SMPC) Avalanche 1.8A (DC) 1.6V @ 3A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 140ns -55°C ~ 175°C 44pF @ 4V, 1MHz
31GF6-E3/54
RFQ
VIEW
RFQ
1,830
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 3A DO201AD - Discontinued at Digi-Key Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.6V @ 3A 20µA @ 600V 600V Fast Recovery = 200mA (Io) 30ns -40°C ~ 150°C -
BY448GP-E3/54
RFQ
VIEW
RFQ
1,828
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 1.65KV 1.5A DO204 SUPERECTIFIER® Active Cut Tape (CT) Through Hole DO-204AC, DO-15, Axial DO-204AC (DO-15) Standard 1.5A 1.6V @ 3A 5µA @ 1650V 1650V Standard Recovery >500ns, > 200mA (Io) 20µs -65°C ~ 175°C 15pF @ 4V, 1MHz
AR3PD-M3/86A
RFQ
VIEW
RFQ
1,375
In-stock
Vishay Semiconductor Diodes Division DIODE AVALANCHE 200V 1.8A TO277A eSMP® Active Cut Tape (CT) Surface Mount TO-277, 3-PowerDFN TO-277A (SMPC) Avalanche 1.8A (DC) 1.6V @ 3A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 140ns -55°C ~ 175°C 44pF @ 4V, 1MHz
BY448TR
RFQ
VIEW
RFQ
2,631
In-stock
Vishay Semiconductor Diodes Division DIODE AVALANCHE 1500V 2A SOD57 - Active Cut Tape (CT) Through Hole SOD-57, Axial SOD-57 Avalanche 2A 1.6V @ 3A 3µA @ 1500V 1500V Standard Recovery >500ns, > 200mA (Io) 20µs 140°C (Max) -
BY448TAP
RFQ
VIEW
RFQ
2,172
In-stock
Vishay Semiconductor Diodes Division DIODE AVALANCHE 1.5KV 2A SOD57 - Active Cut Tape (CT) Through Hole SOD-57, Axial SOD-57 Avalanche 2A 1.6V @ 3A 3µA @ 1200V 1500V Standard Recovery >500ns, > 200mA (Io) 2µs 140°C (Max) -