Current - Average Rectified (Io) :
Voltage - Forward (Vf) (Max) @ If :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction
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RFQ
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RFQ
3,128
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Toshiba Semiconductor and Storage DIODE GEN PURP 200V 5A L-FLAT - Obsolete Tape & Reel (TR) Surface Mount L-FLAT™ L-FLAT™ (4x5.5) Standard 5A (DC) 0.98V @ 5A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -40°C ~ 150°C
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RFQ
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RFQ
1,684
In-stock
Toshiba Semiconductor and Storage DIODE GEN PURP 200V 3A L-FLAT - Obsolete Tape & Reel (TR) Surface Mount L-FLAT™ L-FLAT™ (4x5.5) Standard 3A (DC) 0.98V @ 3A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -40°C ~ 150°C
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RFQ
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RFQ
1,427
In-stock
Toshiba Semiconductor and Storage DIODE GEN PURP 200V 3A L-FLAT - Obsolete Tape & Reel (TR) Surface Mount L-FLAT™ L-FLAT™ (4x5.5) Standard 3A (DC) 0.98V @ 3A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -40°C ~ 150°C
CRH01(TE85R,Q,M)
RFQ
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RFQ
2,688
In-stock
Toshiba Semiconductor and Storage DIODE GEN PURP 200V 1A SFLAT - Active Tape & Reel (TR) Surface Mount SOD-123F S-FLAT (1.6x3.5) Standard 1A 980mV @ 1A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -40°C ~ 150°C
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RFQ
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RFQ
3,085
In-stock
Toshiba Semiconductor and Storage DIODE GEN PURP 200V 1A MFLAT - Active Tape & Reel (TR) Surface Mount SOD-128 M-FLAT (2.4x3.8) Standard 1A 980mV @ 1A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -40°C ~ 150°C
CRH01(TE85L,Q,M)
RFQ
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RFQ
1,159
In-stock
Toshiba Semiconductor and Storage DIODE GEN PURP 200V 1A SFLAT - Active Tape & Reel (TR) Surface Mount SOD-123F S-FLAT (1.6x3.5) Standard 1A 980mV @ 1A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -40°C ~ 150°C