Packaging :
Voltage - DC Reverse (Vr) (Max) :
Operating Temperature - Junction :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
GLOBAL STOCKS
SCS120KGC
RFQ
VIEW
RFQ
3,404
In-stock
Rohm Semiconductor DIODE SCHOTTKY 1.2KV 20A TO220AC - Not For New Designs Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 20A 1.75V @ 20A 400µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns 175°C (Max) 1300pF @ 1V, 1MHz
SCS105KGC
RFQ
VIEW
RFQ
1,637
In-stock
Rohm Semiconductor DIODE SCHOTTKY 1.2KV 5A TO220AC - Not For New Designs Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 5A (DC) 1.75V @ 5A 100µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns 175°C (Max) 325pF @ 1V, 1MHz
SCS210AMC
RFQ
VIEW
RFQ
2,409
In-stock
Rohm Semiconductor DIODE SCHOTTKY 650V 10A TO220FM - Active Tube Through Hole TO-220-2 TO-220FM Silicon Carbide Schottky 10A (DC) 1.55V @ 10A 200µA @ 600V 650V No Recovery Time > 500mA (Io) 0ns 175°C (Max) 365pF @ 1V, 1MHz
SCS110KGC
RFQ
VIEW
RFQ
762
In-stock
Rohm Semiconductor DIODE SCHOTTKY 1.2KV 10A TO220AC - Not For New Designs Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 10A (DC) 1.75V @ 10A 200µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns 175°C (Max) 650pF @ 1V, 1MHz
RFUH10TF6S
RFQ
VIEW
RFQ
2,914
In-stock
Rohm Semiconductor DIODE GEN PURP 600V 10A TO220NFM - Not For New Designs Bulk Through Hole TO-220-2 TO-220NFM Standard 10A 2.8V @ 10A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 25ns 150°C (Max) -
RFN10TF6S
RFQ
VIEW
RFQ
2,190
In-stock
Rohm Semiconductor DIODE GEN PURP 600V 10A TO220NFM - Not For New Designs Bulk Through Hole TO-220-2 TO-220NFM Standard 10A 1.55V @ 10A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 50ns 150°C (Max) -
SCS110AMC
RFQ
VIEW
RFQ
1,684
In-stock
Rohm Semiconductor DIODE SCHOTTKY 600V 10A TO220FM - Not For New Designs Tube Through Hole TO-220-2 TO-220FM Silicon Carbide Schottky 10A (DC) 1.7V @ 10A 200µA @ 600V 600V No Recovery Time > 500mA (Io) 0ns 150°C (Max) 430pF @ 1V, 1MHz
RFUH20TF6S
RFQ
VIEW
RFQ
3,023
In-stock
Rohm Semiconductor DIODE GEN PURP 600V 20A TO220NFM - Not For New Designs Bulk Through Hole TO-220-2 TO-220NFM Standard 20A 2.8V @ 20A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns 150°C (Max) -
RFN20TF6S
RFQ
VIEW
RFQ
1,564
In-stock
Rohm Semiconductor DIODE GEN PURP 600V 20A TO220NFM - Not For New Designs Bulk Through Hole TO-220-2 TO-220NFM Standard 20A 1.55V @ 20A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 60ns 150°C (Max) -
SCS120AGC
RFQ
VIEW
RFQ
1,137
In-stock
Rohm Semiconductor DIODE SCHOTTKY 600V 20A TO220AC - Not For New Designs Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 20A 1.7V @ 20A 400µA @ 600V 600V No Recovery Time > 500mA (Io) 0ns 175°C (Max) 860pF @ 1V, 1MHz
SCS208AGC
RFQ
VIEW
RFQ
3,542
In-stock
Rohm Semiconductor DIODE SCHOTTKY 650V 8A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 8A (DC) 1.55V @ 8A 160µA @ 600V 650V No Recovery Time > 500mA (Io) 0ns 175°C (Max) 291pF @ 1V, 1MHz
SCS210KGC
RFQ
VIEW
RFQ
3,666
In-stock
Rohm Semiconductor DIODE SCHOTTKY 1.2KV 10A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 10A (DC) 1.6V @ 10A 200µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns 175°C (Max) 550pF @ 1V, 1MHz
SCS206AGHRC
RFQ
VIEW
RFQ
1,013
In-stock
Rohm Semiconductor DIODE SCHOTTKY 650V 6A TO-220-2 Automotive, AEC-Q101 Active Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 6A (DC) 1.55V @ 6A 120µA @ 600V 650V No Recovery Time > 500mA (Io) 0ns 175°C (Max) 219pF @ 1V, 1MHz
SCS308APC9
RFQ
VIEW
RFQ
3,681
In-stock
Rohm Semiconductor DIODE SC SCHKY 650V 8A TO220ACP - Active Tube Through Hole TO-220-2 - Silicon Carbide Schottky 8A (DC) 1.5V @ 8A 40µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns 175°C (Max) 400pF @ 1V, 1MHz
RFV15TG6SGC9
RFQ
VIEW
RFQ
2,060
In-stock
Rohm Semiconductor DIODE GEN PURP 600V 15A TO220AC - Active Tube Through Hole TO-220-2 TO-220ACFP Standard 15A 2.8V @ 15A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 50ns 150°C (Max) -
RFV12TG6SGC9
RFQ
VIEW
RFQ
2,867
In-stock
Rohm Semiconductor DIODE GEN PURP 600V 12A TO220AC - Active Tube Through Hole TO-220-2 TO-220ACFP Standard 12A 2.8V @ 12A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 45ns 150°C (Max) -
RFV8TG6SGC9
RFQ
VIEW
RFQ
2,922
In-stock
Rohm Semiconductor DIODE GEN PURP 600V 8A TO220AC - Active Tube Through Hole TO-220-2 TO-220ACFP Standard 8A 2.8V @ 8A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 45ns 150°C (Max) -
RFVS8TG6SGC9
RFQ
VIEW
RFQ
3,530
In-stock
Rohm Semiconductor DIODE GEN PURP 600V 8A TO220AC - Active Tube Through Hole TO-220-2 TO-220ACFP Standard 8A 3V @ 8A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 40ns 150°C (Max) -
RFNL10TJ6SGC9
RFQ
VIEW
RFQ
3,095
In-stock
Rohm Semiconductor DIODE GP 600V 10A TO220ACFP - Active Tube Through Hole TO-220-2 TO-220ACFP Standard 10A 1.3V @ 10A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 150ns 150°C (Max) -
SCS215KGC
RFQ
VIEW
RFQ
3,553
In-stock
Rohm Semiconductor DIODE SCHOTTKY 1.2KV 15A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 15A (DC) 1.6V @ 15A 300µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns 175°C (Max) 790pF @ 1V, 1MHz
SCS112AGC
RFQ
VIEW
RFQ
3,815
In-stock
Rohm Semiconductor DIODE SCHOTTKY 600V 12A TO220AC - Not For New Designs Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 12A 1.7V @ 12A 240µA @ 600V 600V No Recovery Time > 500mA (Io) 0ns 175°C (Max) 516pF @ 1V, 1MHz
SCS110AGC
RFQ
VIEW
RFQ
2,593
In-stock
Rohm Semiconductor DIODE SCHOTTKY 600V 10A TO220AC - Not For New Designs Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 10A 1.7V @ 10A 200µA @ 600V 600V No Recovery Time > 500mA (Io) 0ns 175°C (Max) 430pF @ 1V, 1MHz
SCS108AGC
RFQ
VIEW
RFQ
3,483
In-stock
Rohm Semiconductor DIODE SCHOTTKY 600V 8A TO220AC - Not For New Designs Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 8A 1.7V @ 8A 160µA @ 600V 600V No Recovery Time > 500mA (Io) 0ns 175°C (Max) 345pF @ 1V, 1MHz
RFN20TF6SFH
RFQ
VIEW
RFQ
1,079
In-stock
Rohm Semiconductor DIODE GEN PURP 600V 20A TO220NFM Automotive, AEC-Q101 Not For New Designs Tube Through Hole TO-220-2 TO-220NFM Standard 20A 1.55V @ 20A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 60ns 150°C (Max) -
SCS220KGHRC
RFQ
VIEW
RFQ
2,755
In-stock
Rohm Semiconductor DIODE SCHOTTKY 1200V 20A TO220-2 Automotive, AEC-Q101 Active Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 20A (DC) 1.6V @ 20A 400µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns 175°C (Max) 1060pF @ 1V, 1MHz
SCS215KGHRC
RFQ
VIEW
RFQ
3,564
In-stock
Rohm Semiconductor DIODE SCHOTTKY 1200V 15A TO220-2 Automotive, AEC-Q101 Active Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 15A (DC) 1.6V @ 15A 300µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns 175°C (Max) 790pF @ 1V, 1MHz
SCS210KGHRC
RFQ
VIEW
RFQ
1,893
In-stock
Rohm Semiconductor DIODE SCHOTTKY 1200V 10A TO220-2 Automotive, AEC-Q101 Active Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 10A (DC) 1.6V @ 10A 200µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns 175°C (Max) 550pF @ 1V, 1MHz
SCS215AGHRC
RFQ
VIEW
RFQ
3,029
In-stock
Rohm Semiconductor DIODE SCHOTTKY 650V 15A TO-220-2 Automotive, AEC-Q101 Active Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 15A (DC) 1.55V @ 15A 300µA @ 600V 650V No Recovery Time > 500mA (Io) 0ns 175°C (Max) 550pF @ 1V, 1MHz
SCS210AGHRC
RFQ
VIEW
RFQ
1,856
In-stock
Rohm Semiconductor DIODE SCHOTTKY 650V 10A TO-220-2 Automotive, AEC-Q101 Active Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 10A (DC) 1.55V @ 10A 200µA @ 600V 650V No Recovery Time > 500mA (Io) 0ns 175°C (Max) 365pF @ 1V, 1MHz
SCS205KGHRC
RFQ
VIEW
RFQ
3,312
In-stock
Rohm Semiconductor DIODE SCHOTTKY 1200V 5A TO-220-2 Automotive, AEC-Q101 Active Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 5A (DC) 1.6V @ 5A 100µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns 175°C (Max) 270pF @ 1V, 1MHz