- Diode Type :
- Current - Average Rectified (Io) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
- Applied Filters :
5 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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GLOBAL STOCKS | ||||||||||||||||||||||
VIEW |
1,269
In-stock
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Rohm Semiconductor | DIODE GEN PURP 600V 30A TO247 | - | Active | Bulk | Through Hole | TO-247-3 | TO-247 | Standard | 30A | 1.55V @ 30A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 60ns | 150°C (Max) | - | ||||
VIEW |
3,567
In-stock
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Rohm Semiconductor | DIODE GEN PURP 600V 15A TO247 | - | Active | Tube | Through Hole | TO-247-3 | TO-247 | Standard | 15A | 2.8V @ 30A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | 150°C (Max) | - | ||||
VIEW |
2,193
In-stock
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Rohm Semiconductor | DIODE SILICON 650V 20A TO247 | - | Active | Tube | Through Hole | TO-247-3 | TO-247 | Silicon Carbide Schottky | 20A | 1.55V @ 20A | 400µA @ 600V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 730pF @ 1V, 1MHz | ||||
VIEW |
1,066
In-stock
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Rohm Semiconductor | DIODE SILICON 650V 15A TO247 | - | Active | Tube | Through Hole | TO-247-3 | TO-247 | Silicon Carbide Schottky | 15A | 1.55V @ 15A | 300µA @ 600V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 550pF @ 1V, 1MHz | ||||
VIEW |
882
In-stock
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Rohm Semiconductor | DIODE SCHOTTKY 1200V 10A TO247 | - | Active | Tube | Through Hole | TO-247-3 | TO-247 | Silicon Carbide Schottky | 10A (DC) | - | - | 1200V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | - |