Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
GLOBAL STOCKS
RURG30120
RFQ
VIEW
RFQ
1,328
In-stock
ON Semiconductor DIODE GEN PURP 1.2KV 30A TO247 - Obsolete Tube Through Hole TO-247-2 TO-247 Standard 30A 2.1V @ 30A 250µA @ 1200V 1200V Fast Recovery = 200mA (Io) 150ns -65°C ~ 175°C -
Default Photo
RFQ
VIEW
RFQ
3,259
In-stock
ON Semiconductor 1200V 10A SIC SBD - Active - Through Hole TO-247-2 TO-247-2 Silicon Carbide Schottky 17A (DC) 1.75V @ 10A 200µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 612pF @ 1V, 100kHz
Default Photo
RFQ
VIEW
RFQ
2,886
In-stock
ON Semiconductor 1200V 40A SIC SBD - Active - Through Hole TO-247-2 TO-247-2 Silicon Carbide Schottky 61A (DC) - 200µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 2250pF @ 1V, 100kHz
Default Photo
RFQ
VIEW
RFQ
1,398
In-stock
ON Semiconductor 1200V 50A SIC SBD - Active - Through Hole TO-247-2 TO-247-2 Silicon Carbide Schottky 77A (DC) - 200µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 2560pF @ 1V, 100kHz
Default Photo
RFQ
VIEW
RFQ
3,610
In-stock
ON Semiconductor 1200V 30A SIC SBD - Active - Through Hole TO-247-2 TO-247-2 Silicon Carbide Schottky 46A (DC) - 200µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 1740pF @ 1V, 100kHz
Default Photo
RFQ
VIEW
RFQ
3,832
In-stock
ON Semiconductor 1200V 20A AUTO SIC SBD Automotive, AEC-Q101 Active - Through Hole TO-247-2 TO-247-2 Silicon Carbide Schottky 30A (DC) - 200µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 1220pF @ 1V, 100KHz
Default Photo
RFQ
VIEW
RFQ
1,643
In-stock
ON Semiconductor DIODE SCHOTTKY 1.2KV 30A TO247-2 - Active Tube Through Hole TO-247-2 TO-247-2 Silicon Carbide Schottky 30A (DC) 1.75V @ 20A 200µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns - 1220pF @ 1V, 100KHz
Default Photo
RFQ
VIEW
RFQ
2,798
In-stock
ON Semiconductor 1200V 15A SIC SBD - Active - Through Hole TO-247-2 TO-247-2 Silicon Carbide Schottky 26A (DC) 1.75V @ 15A 200µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 936pF @ 1V, 100kHz
Default Photo
RFQ
VIEW
RFQ
1,593
In-stock
ON Semiconductor 1200V 10A AUTO SIC SBD Automotive, AEC-Q101 Active - Through Hole TO-247-2 TO-247-2 Silicon Carbide Schottky 17A (DC) - 200µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 612pF @ 1V, 100kHz
ISL9R30120G2
RFQ
VIEW
RFQ
1,365
In-stock
ON Semiconductor DIODE GEN PURP 1.2KV 30A TO247 Stealth™ Active Tube Through Hole TO-247-2 TO-247-2 Standard 30A 3.3V @ 30A 100µA @ 1200V 1200V Fast Recovery = 200mA (Io) 100ns -55°C ~ 150°C -
RHRG30120
RFQ
VIEW
RFQ
761
In-stock
ON Semiconductor DIODE GEN PURP 1.2KV 30A TO247 - Active Tube Through Hole TO-247-2 TO-247-2 Standard 30A 3.2V @ 30A 250µA @ 1200V 1200V Fast Recovery = 200mA (Io) 85ns -65°C ~ 175°C -
ISL9R18120G2
RFQ
VIEW
RFQ
2,779
In-stock
ON Semiconductor DIODE GEN PURP 1.2KV 18A TO247 Stealth™ Active Tube Through Hole TO-247-2 TO-247-2 Standard 18A 3.3V @ 18A 100µA @ 1200V 1200V Fast Recovery = 200mA (Io) 70ns -55°C ~ 150°C -
RHRG75120
RFQ
VIEW
RFQ
2,033
In-stock
ON Semiconductor DIODE GEN PURP 1.2KV 75A TO247 - Active Tube Through Hole TO-247-2 TO-247-2 Standard 75A 3.2V @ 75A 250µA @ 1200V 1200V Fast Recovery = 200mA (Io) 100ns -65°C ~ 175°C -