Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
GLOBAL STOCKS
1N5401
RFQ
VIEW
RFQ
659
In-stock
ON Semiconductor DIODE GEN PURP 100V 3A DO201AD - Discontinued at Digi-Key Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.2V @ 3A 5µA @ 100V 100V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 30pF @ 4V, 1MHz
1N5401
RFQ
VIEW
RFQ
1,056
In-stock
ON Semiconductor DIODE GEN PURP 100V 3A DO201AD - Obsolete Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.2V @ 3A 5µA @ 100V 100V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 30pF @ 4V, 1MHz
EGP30B
RFQ
VIEW
RFQ
2,034
In-stock
ON Semiconductor DIODE GEN PURP 100V 3A DO201AD - Active Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Standard 3A 950mV @ 3A 5µA @ 100V 100V Fast Recovery = 200mA (Io) 50ns -65°C ~ 150°C 95pF @ 4V, 1MHz
EGP30B
RFQ
VIEW
RFQ
3,379
In-stock
ON Semiconductor DIODE GEN PURP 100V 3A DO201AD - Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 3A 950mV @ 3A 5µA @ 100V 100V Fast Recovery = 200mA (Io) 50ns -65°C ~ 150°C 95pF @ 4V, 1MHz
MR851RLG
RFQ
VIEW
RFQ
2,860
In-stock
ON Semiconductor DIODE GEN PURP 100V 3A AXIAL - Active Cut Tape (CT) Through Hole DO-201AD, Axial Axial Standard 3A 1.25V @ 3A 10µA @ 100V 100V Fast Recovery = 200mA (Io) 300ns -65°C ~ 125°C -
MR851RLG
RFQ
VIEW
RFQ
2,616
In-stock
ON Semiconductor DIODE GEN PURP 100V 3A AXIAL - Active Tape & Reel (TR) Through Hole DO-201AD, Axial Axial Standard 3A 1.25V @ 3A 10µA @ 100V 100V Fast Recovery = 200mA (Io) 300ns -65°C ~ 125°C -
MR851G
RFQ
VIEW
RFQ
3,384
In-stock
ON Semiconductor DIODE GEN PURP 100V 3A AXIAL - Active Bulk Through Hole DO-201AD, Axial Axial Standard 3A 1.25V @ 3A 10µA @ 100V 100V Fast Recovery = 200mA (Io) 300ns -65°C ~ 125°C -