Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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RD0506T-H
RFQ
VIEW
RFQ
3,065
In-stock
ON Semiconductor DIODE GEN PURP 600V 5A TP - Last Time Buy Bulk Through Hole TO-251-3 Short Leads, IPak, TO-251AA TP Standard 5A 1.6V @ 5A 50µA @ 600V 600V Fast Recovery = 200mA (Io) 50ns 150°C (Max) -
RD0306T-H
RFQ
VIEW
RFQ
896
In-stock
ON Semiconductor DIODE GEN PURP 600V 3A TP - Last Time Buy Bulk Through Hole TO-251-3 Short Leads, IPak, TO-251AA TP Standard 3A 1.5V @ 3A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 50ns 150°C (Max) -
BAV21
RFQ
VIEW
RFQ
3,029
In-stock
ON Semiconductor DIODE GEN PURP 250V 200MA DO35 - Last Time Buy Bulk Through Hole DO-204AH, DO-35, Axial DO-35 Standard 200mA 1.25V @ 200mA 100nA @ 200V 250V Small Signal =< 200mA (Io), Any Speed 50ns 175°C (Max) 5pF @ 0V, 1MHz
1N486B
RFQ
VIEW
RFQ
932
In-stock
ON Semiconductor DIODE GEN PURP 250V 200MA DO35 - Last Time Buy Bulk Through Hole DO-204AH, DO-35, Axial DO-35 Standard 200mA 1V @ 100mA 50nA @ 225V 250V Small Signal =< 200mA (Io), Any Speed - 175°C (Max) -
1N483B
RFQ
VIEW
RFQ
695
In-stock
ON Semiconductor DIODE GEN PURP 80V 200MA DO35 - Last Time Buy Bulk Through Hole DO-204AH, DO-35, Axial DO-35 Standard 200mA 1V @ 100mA 25nA @ 60V 80V Small Signal =< 200mA (Io), Any Speed - 175°C (Max) -
BAW76
RFQ
VIEW
RFQ
1,795
In-stock
ON Semiconductor DIODE GEN PURP 75V 300MA DO35 - Last Time Buy Bulk Through Hole DO-204AH, DO-35, Axial DO-35 Standard 300mA 1V @ 100mA 100nA @ 50V 75V Fast Recovery = 200mA (Io) 4ns 175°C (Max) 2pF @ 0V, 1MHz
BAW62
RFQ
VIEW
RFQ
2,939
In-stock
ON Semiconductor DIODE GEN PURP 75V 300MA DO35 - Last Time Buy Bulk Through Hole DO-204AH, DO-35, Axial DO-35 Standard 300mA 1V @ 100mA 5µA @ 75V 75V Fast Recovery = 200mA (Io) 4ns 175°C (Max) 2pF @ 0V, 1MHz