- Part Status :
- Packaging :
- Mounting Type :
- Package / Case :
- Current - Reverse Leakage @ Vr :
- Applied Filters :
5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
2,106
In-stock
|
Microsemi Corporation | UFR,FRR | - | Active | Tape & Reel (TR) | Surface Mount | SQ-MELF, A | D-5A | Standard | 2A | 1.6V @ 2A | 500nA @ 400V | 400V | Fast Recovery = 200mA (Io) | 45ns | -65°C ~ 150°C | 10pF @ 10V, 1MHz | |||
|
|
VIEW |
1,216
In-stock
|
Microsemi Corporation | DIODE GEN PURP 660V 2A AXIAL | Military, MIL-PRF-19500/585 | Discontinued at Digi-Key | Bulk | Through Hole | A, Axial | - | Standard | 2A | 1.6V @ 2A | 500nA @ 660V | 660V | Fast Recovery = 200mA (Io) | 30ns | -65°C ~ 150°C | 10pF @ 10V, 1MHz | |||
|
|
VIEW |
3,695
In-stock
|
Microsemi Corporation | DIODE GEN PURP 440V 2A AXIAL | Military, MIL-PRF-19500/585 | Active | Bulk | Through Hole | A, Axial | - | Standard | 2A | 1.6V @ 2A | 500nA @ 440V | 440V | Fast Recovery = 200mA (Io) | 30ns | -65°C ~ 150°C | 10pF @ 10V, 1MHz | |||
|
|
VIEW |
3,123
In-stock
|
Microsemi Corporation | DIODE GEN PURP 220V 2A AXIAL | Military, MIL-PRF-19500/585 | Active | Bulk | Through Hole | A, Axial | - | Standard | 2A | 1.6V @ 2A | 500nA @ 220V | 220V | Fast Recovery = 200mA (Io) | 30ns | -65°C ~ 150°C | 10pF @ 10V, 1MHz | |||
|
VIEW |
1,286
In-stock
|
Microsemi Corporation | DIODE GEN PURP 220V 2A D5A | Military, MIL-PRF-19500/585 | Active | Bulk | Surface Mount | SQ-MELF, A | D-5A | Standard | 2A | 1.6V @ 2A | 500nA @ 220V | 220V | Fast Recovery = 200mA (Io) | 30ns | -65°C ~ 150°C | 10pF @ 10V, 1MHz | |||
