Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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IDP09E120
RFQ
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RFQ
1,798
In-stock
Infineon Technologies DIODE GEN PURP 1.2KV 23A TO220-2 - Obsolete Tube Through Hole TO-220-2 PG-TO220-2 Standard 23A (DC) 2.15V @ 9A 100µA @ 1200V 1200V Fast Recovery = 200mA (Io) 140ns -55°C ~ 150°C -
IDP04E120
RFQ
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RFQ
3,490
In-stock
Infineon Technologies DIODE GEN PURP 1.2KV 11.2A TO220 - Obsolete Tube Through Hole TO-220-2 PG-TO220-2 Standard 11.2A (DC) 2.15V @ 4A 100µA @ 1200V 1200V Fast Recovery = 200mA (Io) 115ns -55°C ~ 150°C -
IDP18E120XKSA1
RFQ
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RFQ
1,828
In-stock
Infineon Technologies DIODE GEN PURP 1.2KV 31A TO220-2 - Active Tube Through Hole TO-220-2 PG-TO220-2 Standard 31A (DC) 2.15V @ 18A 100µA @ 1200V 1200V Fast Recovery = 200mA (Io) 195ns -55°C ~ 150°C -
IDP12E120XKSA1
RFQ
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RFQ
2,572
In-stock
Infineon Technologies DIODE GEN PURP 1.2KV 28A TO220-2 - Active Tube Through Hole TO-220-2 PG-TO220-2 Standard 28A (DC) 2.15V @ 12A 100µA @ 1200V 1200V Fast Recovery = 200mA (Io) 150ns -55°C ~ 150°C -
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RFQ
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RFQ
3,048
In-stock
Infineon Technologies DIODE SCHOTTKY 1.2KV 7.5A TO247 thinQ!™ Obsolete Tube Through Hole TO-247-3 Variant PG-TO247HC-3 Silicon Carbide Schottky 7.5A (DC) 1.8V @ 10A 180µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 150°C 375pF @ 1V, 1MHz
IDP30E120XKSA1
RFQ
VIEW
RFQ
967
In-stock
Infineon Technologies DIODE GEN PURP 1.2KV 50A TO220-2 - Active Tube Through Hole TO-220-2 PG-TO220-2 Standard 50A (DC) 2.15V @ 30A 100µA @ 1200V 1200V Fast Recovery = 200mA (Io) 243ns -55°C ~ 150°C -