- Mounting Type :
- Supplier Device Package :
- Current - Average Rectified (Io) :
- Voltage - Forward (Vf) (Max) @ If :
-
- 1.34V @ 10A (1)
- 1.39V @ 750mA (1)
- 1.3V @ 2.5A (1)
- 1.5V @ 15A (1)
- 1.5V @ 1A (1)
- 1.65V @ 5A (1)
- 1.6V @ 10A (1)
- 1.6V @ 1A (3)
- 1.6V @ 2.5A (1)
- 1.74V @ 750mA (1)
- 1.7V @ 300mA (1)
- 1.8V @ 10A (1)
- 1.8V @ 1A (10)
- 1.8V @ 2A (6)
- 1.8V @ 50A (1)
- 2.2V @ 300mA (3)
- 2V @ 10A (1)
- 2V @ 1A (3)
- 2V @ 20A (1)
- 4.6V @ 50mA (1)
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
-
- 1107pF @ 1V, 1MHz (2)
- 131pF @ 1V, 1MHz (6)
- 138pF @ 1V, 1MHz (1)
- 237pF @ 1V, 1MHz (1)
- 25pF @ 1V, 1MHz (1)
- 260pF @ 1V, 1MHz (2)
- 274pF @ 1V, 1MHz (2)
- 2940pF @ 1V, 1MHz (1)
- 42pF @ 1V, 1MHz (4)
- 520pF @ 1V, 1MHz (2)
- 66pF @ 1V, 1MHz (1)
- 69pF @ 1V, 1MHz (7)
- 76pF @ 1V, 1MHz (8)
- 884pF @ 1V, 1MHz (1)
- 968pF @ 1V, 1MHz (1)
- Applied Filters :
40 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
717
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | - | Active | Tube | Through Hole | Axial | - | Silicon Carbide Schottky | 50mA (DC) | 4.6V @ 50mA | 3.8µA @ 8000V | 8000V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 25pF @ 1V, 1MHz | |||
|
VIEW |
2,880
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | - | Active | Tube | Through Hole | TO-257-3 | TO-257 | Silicon Carbide Schottky | 9.4A (DC) | 1.6V @ 10A | 20µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 250°C | 884pF @ 1V, 1MHz | |||
|
VIEW |
3,663
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 4.3A TO276 | - | Active | Tube | Surface Mount | TO-276AA | TO-276 | Silicon Carbide Schottky | 4.3A (DC) | 1.65V @ 5A | 5µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 250°C | 274pF @ 1V, 1MHz | |||
|
|
VIEW |
3,357
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 9.4A TO257 | - | Active | Tube | Through Hole | TO-257-3 | TO-257 | Silicon Carbide Schottky | 9.4A (DC) | 1.34V @ 10A | 5µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 250°C | 1107pF @ 1V, 1MHz | |||
|
|
VIEW |
3,699
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | - | Active | Tube | Through Hole | TO-276AA | TO-276 | Silicon Carbide Schottky | 1A | 1.5V @ 1A | 5µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 250°C | 76pF @ 1V, 1MHz | |||
|
VIEW |
3,634
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO252 | - | Active | Tube | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | Silicon Carbide Schottky | 10A | 2V @ 10A | 250µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 520pF @ 1V, 1MHz | |||
|
VIEW |
3,563
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 10A | 1.8V @ 10A | 40µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 520pF @ 1V, 1MHz | |||
|
|
VIEW |
660
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 5A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 5A | 1.8V @ 2A | 50µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 260pF @ 1V, 1MHz | |||
|
VIEW |
2,914
In-stock
|
GeneSiC Semiconductor | DIODE SILICON 1.2KV 5A TO252 | - | Active | Bulk | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | Silicon Carbide Schottky | 5A | 1.8V @ 2A | 50µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 260pF @ 1V, 1MHz | |||
|
|
VIEW |
794
In-stock
|
GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | - | Active | Tube | Through Hole | TO-257-3 | TO-257 | Silicon Carbide Schottky | 8A (DC) | 1.6V @ 2.5A | 10µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 250°C | 237pF @ 1V, 1MHz | |||
|
VIEW |
2,525
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 50A TO247AC | - | Active | Tube | Through Hole | TO-247-2 | TO-247AC | Silicon Carbide Schottky | 50A | 1.8V @ 50A | 1mA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 2940pF @ 1V, 1MHz | |||
|
|
VIEW |
1,028
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 14.6A TO276 | - | Active | Tube | Surface Mount | TO-276AA | TO-276 | Silicon Carbide Schottky | 14.6A (DC) | 1.5V @ 15A | 5µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 250°C | 1107pF @ 1V, 1MHz | |||
|
|
VIEW |
1,026
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 750MA TO257 | - | Active | Tube | Through Hole | TO-257-3 | TO-257 | Silicon Carbide Schottky | 750mA | 1.74V @ 750mA | 10µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 250°C | 66pF @ 1V, 1MHz | |||
|
|
VIEW |
2,209
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | - | Active | Tube | Through Hole | TO-257-3 | TO-257 | Silicon Carbide Schottky | 2.5A | 1.3V @ 2.5A | 5µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 250°C | 274pF @ 1V, 1MHz | |||
|
|
VIEW |
3,949
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | - | Active | Tube | Through Hole | TO-257-3 | TO-257 | Silicon Carbide Schottky | 750mA | 1.39V @ 750mA | 5µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 250°C | 76pF @ 1V, 1MHz | |||
|
VIEW |
3,528
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 600V 4A | - | Active | Bulk | Through Hole | TO-206AB, TO-46-3 Metal Can | TO-46 | Silicon Carbide Schottky | 4A (DC) | 1.6V @ 1A | 5µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 225°C | 76pF @ 1V, 1MHz | |||
|
VIEW |
2,785
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 100V 4A | - | Active | Bulk | Through Hole | TO-206AB, TO-46-3 Metal Can | TO-46 | Silicon Carbide Schottky | 4A (DC) | 1.6V @ 1A | 5µA @ 100V | 100V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 225°C | 76pF @ 1V, 1MHz | |||
|
|
VIEW |
874
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 2A | 1.8V @ 2A | 50µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 138pF @ 1V, 1MHz | |||
|
VIEW |
3,204
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | - | Active | Bulk | Through Hole | TO-206AB, TO-46-3 Metal Can | TO-46 | Silicon Carbide Schottky | 4A (DC) | 1.6V @ 1A | 5µA @ 300V | 300V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 225°C | 76pF @ 1V, 1MHz | |||
|
VIEW |
1,229
In-stock
|
GeneSiC Semiconductor | DIODE SILICON 1.2KV 1A TO252 | - | Active | Digi-Reel® | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | Silicon Carbide Schottky | 1A | 1.8V @ 1A | 2µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 69pF @ 1V, 1MHz | |||
|
|
VIEW |
1,159
In-stock
|
GeneSiC Semiconductor | DIODE SILICON 1.2KV 1A TO252 | - | Active | Cut Tape (CT) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | Silicon Carbide Schottky | 1A | 1.8V @ 1A | 2µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 69pF @ 1V, 1MHz | |||
|
|
VIEW |
1,332
In-stock
|
GeneSiC Semiconductor | DIODE SILICON 1.2KV 1A TO252 | - | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | Silicon Carbide Schottky | 1A | 1.8V @ 1A | 2µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 69pF @ 1V, 1MHz | |||
|
|
VIEW |
2,833
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 1A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 1A | 1.8V @ 1A | 2µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 69pF @ 1V, 1MHz | |||
|
VIEW |
2,202
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A DO214AA | - | Active | Digi-Reel® | Surface Mount | DO-214AA, SMB | DO-214AA | Silicon Carbide Schottky | 2A (DC) | 1.8V @ 1A | 50µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 131pF @ 1V, 1MHz | |||
|
|
VIEW |
687
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A DO214AA | - | Active | Cut Tape (CT) | Surface Mount | DO-214AA, SMB | DO-214AA | Silicon Carbide Schottky | 2A (DC) | 1.8V @ 1A | 50µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 131pF @ 1V, 1MHz | |||
|
|
VIEW |
907
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A DO214AA | - | Active | Tape & Reel (TR) | Surface Mount | DO-214AA, SMB | DO-214AA | Silicon Carbide Schottky | 2A (DC) | 1.8V @ 1A | 50µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 131pF @ 1V, 1MHz | |||
|
|
VIEW |
2,531
In-stock
|
GeneSiC Semiconductor | DIODE SIC SCHKY 1.2KV 2A TO252 | - | Active | Digi-Reel® | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | Silicon Carbide Schottky | 5A (DC) | 1.8V @ 2A | 50µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 131pF @ 1V, 1MHz | |||
|
|
VIEW |
707
In-stock
|
GeneSiC Semiconductor | DIODE SIC SCHKY 1.2KV 2A TO252 | - | Active | Cut Tape (CT) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | Silicon Carbide Schottky | 5A (DC) | 1.8V @ 2A | 50µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 131pF @ 1V, 1MHz | |||
|
|
VIEW |
1,477
In-stock
|
GeneSiC Semiconductor | DIODE SIC SCHKY 1.2KV 2A TO252 | - | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | Silicon Carbide Schottky | 5A (DC) | 1.8V @ 2A | 50µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 131pF @ 1V, 1MHz | |||
|
|
VIEW |
3,834
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A DO214AA | - | Active | Digi-Reel® | Surface Mount | DO-214AA, SMB | DO-214AA | Silicon Carbide Schottky | 1A (DC) | 2V @ 1A | 10µA @ 6.5V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 76pF @ 1V, 1MHz | |||
